We show that the open circuit voltage (Voc) in hydrogenated amorphous silicon (a-Si:H) solar cells can be described by an analytical energy-barrier-dependent equation, considering thermionic emission as the physical mechanism determining the recombination current. For this purpose, the current-voltage characteristics of two device structures, i.e., a-Si:H(n)/a-Si:H(i)/a-Si:H(p)/AZO p-i-n solar cells with different p-doping concentrations and a-Si:H(n)/a-Si:H(i)/AZO Schottky structures with different intrinsic layer thicknesses, were analyzed in dark and under illumination, respectively. The calculated barrier in the p-i-n devices is consistent with the difference between the work function of the p-layer and the conduction band edge of the i-layer at the interface in thermal equilibrium.
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25 July 2016
Research Article|
July 27 2016
Analytical energy-barrier-dependent Voc model for amorphous silicon solar cells Available to Purchase
A. Castro-Carranza
;
A. Castro-Carranza
a)
1Institute of Solid State Physics,
University of Bremen
, 28359 Bremen, Germany
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J. C. Nolasco;
J. C. Nolasco
a)
2Energy and Semiconductor Research Laboratory,
Carl von Ossietzky University of Oldenburg
, 26129 Oldenburg, Germany
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N. Reininghaus;
N. Reininghaus
3NEXT ENERGY-EWE Research Centre for Energy
Technology at Carl von Ossietzky University of Oldenburg
, 26129 Oldenburg, Germany
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S. Geißendörfer;
S. Geißendörfer
3NEXT ENERGY-EWE Research Centre for Energy
Technology at Carl von Ossietzky University of Oldenburg
, 26129 Oldenburg, Germany
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M. Vehse;
M. Vehse
3NEXT ENERGY-EWE Research Centre for Energy
Technology at Carl von Ossietzky University of Oldenburg
, 26129 Oldenburg, Germany
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J. Parisi;
J. Parisi
2Energy and Semiconductor Research Laboratory,
Carl von Ossietzky University of Oldenburg
, 26129 Oldenburg, Germany
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J. Gutowski;
J. Gutowski
1Institute of Solid State Physics,
University of Bremen
, 28359 Bremen, Germany
4MAPEX Center of Materials and Processes,
University of Bremen
, 28359 Bremen, Germany
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T. Voss
T. Voss
5Institute of Semiconductor Technology,
Braunschweig University of Technology
, 38092 Braunschweig, Germany
6Laboratory for Emerging Nanometrology (LENA),
Braunschweig University of Technology
, 38092 Braunschweig, Germany
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A. Castro-Carranza
1,a)
J. C. Nolasco
2,a)
N. Reininghaus
3
S. Geißendörfer
3
M. Vehse
3
J. Parisi
2
J. Gutowski
1,4
T. Voss
5,6
1Institute of Solid State Physics,
University of Bremen
, 28359 Bremen, Germany
2Energy and Semiconductor Research Laboratory,
Carl von Ossietzky University of Oldenburg
, 26129 Oldenburg, Germany
3NEXT ENERGY-EWE Research Centre for Energy
Technology at Carl von Ossietzky University of Oldenburg
, 26129 Oldenburg, Germany
4MAPEX Center of Materials and Processes,
University of Bremen
, 28359 Bremen, Germany
5Institute of Semiconductor Technology,
Braunschweig University of Technology
, 38092 Braunschweig, Germany
6Laboratory for Emerging Nanometrology (LENA),
Braunschweig University of Technology
, 38092 Braunschweig, Germany
a)
Authors to whom correspondence should be addressed. Electronic addresses: [email protected] and [email protected]
Appl. Phys. Lett. 109, 043503 (2016)
Article history
Received:
April 18 2016
Accepted:
July 14 2016
Citation
A. Castro-Carranza, J. C. Nolasco, N. Reininghaus, S. Geißendörfer, M. Vehse, J. Parisi, J. Gutowski, T. Voss; Analytical energy-barrier-dependent Voc model for amorphous silicon solar cells. Appl. Phys. Lett. 25 July 2016; 109 (4): 043503. https://doi.org/10.1063/1.4959939
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