Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon (100) Available to Purchase

Here we investigate the hexagonal-to-cubic phase transition in metalorganic-chemical-vapor-deposition-grown gallium nitride enabled via silicon (100) nano-patterning. Electron backscatter diffraction and depth-resolved cathodoluminescence experiments show complete cubic phase GaN surface coverage when GaN deposition thickness (⁠$hc$⁠), etch depth (⁠$td$⁠), and opening width (⁠$p$⁠) obey $hc≈1.06p−0.75td$⁠; in line with a geometrical model based on crystallography. Cubic GaN uniformity is studied via electron backscatter diffraction and cathodoluminescence measurements. Atomic force microscopy reveals a smooth cubic GaN surface. Phase-transition cubic GaN shows promising optical and structural quality for integrated photonic devices.