We demonstrate highly efficient spin Hall nano-oscillators (SHNOs) based on NiFe/β-W bilayers. Thanks to the very high spin Hall angle of β-W, we achieve more than a 60% reduction in the auto-oscillation threshold current compared to NiFe/Pt bilayers. The structural, electrical, and magnetic properties of the bilayers, as well as the microwave signal generation properties of the SHNOs, have been studied in detail. Our results provide a promising path for the realization of low-current SHNO microwave devices with highly efficient spin-orbit torque from β-W.
Low operational current spin Hall nano-oscillators based on NiFe/W bilayers
Hamid Mazraati, Sunjae Chung, Afshin Houshang, Mykola Dvornik, Luca Piazza, Fatjon Qejvanaj, Sheng Jiang, Tuan Q. Le, Jonas Weissenrieder, Johan Åkerman; Low operational current spin Hall nano-oscillators based on NiFe/W bilayers. Appl. Phys. Lett. 12 December 2016; 109 (24): 242402. https://doi.org/10.1063/1.4971828
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