Perovskite/crystalline silicon tandem solar cells have the potential to reach efficiencies beyond those of silicon single-junction record devices. However, the high-temperature process of 500 °C needed for state-of-the-art mesoscopic perovskite cells has, so far, been limiting their implementation in monolithic tandem devices. Here, we demonstrate the applicability of zinc tin oxide as a recombination layer and show its electrical and optical stability at temperatures up to 500 °C. To prove the concept, we fabricate monolithic tandem cells with mesoscopic top cell with up to 16% efficiency. We then investigate the effect of zinc tin oxide layer thickness variation, showing a strong influence on the optical interference pattern within the tandem device. Finally, we discuss the perspective of mesoscopic perovskite cells for high-efficiency monolithic tandem solar cells.
Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells
Jérémie Werner, Arnaud Walter, Esteban Rucavado, Soo-Jin Moon, Davide Sacchetto, Michael Rienaecker, Robby Peibst, Rolf Brendel, Xavier Niquille, Stefaan De Wolf, Philipp Löper, Monica Morales-Masis, Sylvain Nicolay, Bjoern Niesen, Christophe Ballif; Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells. Appl. Phys. Lett. 5 December 2016; 109 (23): 233902. https://doi.org/10.1063/1.4971361
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