Contact resistance plays an important role in amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). In this paper, the surface potential distributions along the channel have been measured by using Kelvin probe force microscopy (KPFM) on operating a-IGZO TFTs, and sharp potential drops at the edges of source and drain were observed. The source and drain contact resistances can be extracted by dividing sharp potential drops with the corresponding drain to source current. It is found that the contact resistances could not be neglected compared with the whole channel resistances in the a-IGZO TFT, and the contact resistances decrease remarkably with increasing gate biased voltage. Our results suggest that the contact resistances can be controlled by tuning the gate biased voltage. Moreover, a transition from gradual channel approximation to space charge region was observed through the surface potential map directly when TFT operating from linear regime to saturation regime.
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11 July 2016
Research Article|
July 12 2016
Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy
Zhiheng Han;
Zhiheng Han
1Key Laboratory of Microelectronic Devices and Integrated Technology,
Institute of Microelectronics of Chinese Academy of Sciences
, Beijing 100029, China
2
Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)
, Nanjing 210009, China
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Guangwei Xu;
Guangwei Xu
1Key Laboratory of Microelectronic Devices and Integrated Technology,
Institute of Microelectronics of Chinese Academy of Sciences
, Beijing 100029, China
2
Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)
, Nanjing 210009, China
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Wei Wang;
Wei Wang
1Key Laboratory of Microelectronic Devices and Integrated Technology,
Institute of Microelectronics of Chinese Academy of Sciences
, Beijing 100029, China
2
Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)
, Nanjing 210009, China
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Congyan Lu
;
Congyan Lu
1Key Laboratory of Microelectronic Devices and Integrated Technology,
Institute of Microelectronics of Chinese Academy of Sciences
, Beijing 100029, China
2
Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)
, Nanjing 210009, China
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Nianduan Lu
;
Nianduan Lu
1Key Laboratory of Microelectronic Devices and Integrated Technology,
Institute of Microelectronics of Chinese Academy of Sciences
, Beijing 100029, China
2
Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)
, Nanjing 210009, China
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Zhuoyu Ji;
Zhuoyu Ji
1Key Laboratory of Microelectronic Devices and Integrated Technology,
Institute of Microelectronics of Chinese Academy of Sciences
, Beijing 100029, China
2
Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)
, Nanjing 210009, China
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Ling Li;
Ling Li
a)
1Key Laboratory of Microelectronic Devices and Integrated Technology,
Institute of Microelectronics of Chinese Academy of Sciences
, Beijing 100029, China
2
Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)
, Nanjing 210009, China
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Ming Liu
Ming Liu
1Key Laboratory of Microelectronic Devices and Integrated Technology,
Institute of Microelectronics of Chinese Academy of Sciences
, Beijing 100029, China
2
Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)
, Nanjing 210009, China
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a)
Electronic mail: [email protected]
Appl. Phys. Lett. 109, 023509 (2016)
Article history
Received:
March 25 2016
Accepted:
June 28 2016
Citation
Zhiheng Han, Guangwei Xu, Wei Wang, Congyan Lu, Nianduan Lu, Zhuoyu Ji, Ling Li, Ming Liu; Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy. Appl. Phys. Lett. 11 July 2016; 109 (2): 023509. https://doi.org/10.1063/1.4958332
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