Low-pressure chemical vapor deposition growth of graphene on Iridium (Ir) layers epitaxially deposited on α-Al2O3 (0001) substrates was investigated. The X-ray diffraction, Raman and reflection high energy electron diffraction characterizations revealed that graphene films were epitaxially grown on Ir(111) layers, and the in-plane epitaxial relationship between graphene, Ir(111), and α-Al2O3(0001) was graphene ⟨⟩//Ir⟨⟩//α-Al2O3⟨⟩. The graphene on Ir(111) was electrochemically transferred onto SiO2/Si substrates. We also demonstrated the reuse of the Ir(111)/α-Al2O3(0001) substrates in multiple growth and transfer cycles.
Epitaxial growth and electrochemical transfer of graphene on Ir(111)/α-Al2O3(0001) substrates
Shinji Koh, Yuta Saito, Hideyuki Kodama, Atsuhito Sawabe; Epitaxial growth and electrochemical transfer of graphene on Ir(111)/α-Al2O3(0001) substrates. Appl. Phys. Lett. 11 July 2016; 109 (2): 023105. https://doi.org/10.1063/1.4958843
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