MoTe2 is an emerging two-dimensional layered material showing ambipolar/p-type conductivity, which makes it an important supplement to n-type two-dimensional layered material like MoS2. However, the properties based on its van der Waals heterostructures have been rarely studied. Here, taking advantage of the strong Fermi level tunability of monolayer graphene (G) and the feature of van der Waals interfaces that is free from Fermi level pinning effect, we fabricate G/MoTe2/G van der Waals heterostructures and systematically study the electronic and optoelectronic properties. We demonstrate the G/MoTe2/G FETs with low Schottky barriers for both holes (55.09 meV) and electrons (122.37 meV). Moreover, the G/MoTe2/G phototransistors show high photoresponse performances with on/off ratio, responsivity, and detectivity of ∼105, 87 A/W, and 1012 Jones, respectively. Finally, we find the response time of the phototransistors is effectively tunable and a mechanism therein is proposed to explain our observation. This work provides an alternative choice of contact for high-performance devices based on p-type and ambipolar two-dimensional layered materials.
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7 November 2016
Research Article|
November 08 2016
Strong electrically tunable MoTe2/graphene van der Waals heterostructures for high-performance electronic and optoelectronic devices
Feng Wang;
Feng Wang
1
CAS Center for Excellence in Nanoscience
, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
2
University of Chinese Academy of Sciences
, Beijing 100049, People's Republic of China
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Lei Yin;
Lei Yin
1
CAS Center for Excellence in Nanoscience
, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
2
University of Chinese Academy of Sciences
, Beijing 100049, People's Republic of China
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Zhenxing Wang;
Zhenxing Wang
1
CAS Center for Excellence in Nanoscience
, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
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Kai Xu;
Kai Xu
1
CAS Center for Excellence in Nanoscience
, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
2
University of Chinese Academy of Sciences
, Beijing 100049, People's Republic of China
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Fengmei Wang;
Fengmei Wang
1
CAS Center for Excellence in Nanoscience
, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
2
University of Chinese Academy of Sciences
, Beijing 100049, People's Republic of China
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Tofik Ahmed Shifa;
Tofik Ahmed Shifa
1
CAS Center for Excellence in Nanoscience
, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
2
University of Chinese Academy of Sciences
, Beijing 100049, People's Republic of China
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Yun Huang;
Yun Huang
1
CAS Center for Excellence in Nanoscience
, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
2
University of Chinese Academy of Sciences
, Beijing 100049, People's Republic of China
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Yao Wen;
Yao Wen
1
CAS Center for Excellence in Nanoscience
, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
2
University of Chinese Academy of Sciences
, Beijing 100049, People's Republic of China
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Chao Jiang;
Chao Jiang
1
CAS Center for Excellence in Nanoscience
, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
Appl. Phys. Lett. 109, 193111 (2016)
Article history
Received:
September 23 2016
Accepted:
October 25 2016
Citation
Feng Wang, Lei Yin, Zhenxing Wang, Kai Xu, Fengmei Wang, Tofik Ahmed Shifa, Yun Huang, Yao Wen, Chao Jiang, Jun He; Strong electrically tunable MoTe2/graphene van der Waals heterostructures for high-performance electronic and optoelectronic devices. Appl. Phys. Lett. 7 November 2016; 109 (19): 193111. https://doi.org/10.1063/1.4967232
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