Since the discovery of ferroelectricity (FE) in HfO2-based thin films, they are gaining increasing attention as a viable alternative to conventional FE in the next generation of non-volatile memory devices. In order to further increase the density of elements in the integrated circuits, it is essential to adopt a three-dimensional design. Since atomic layer deposition (ALD) processes are extremely conformal, ALD is the favored approach in the production of 3D ferroelectric random access memory. Here, we report the fabrication of fully ALD-grown capacitors comprising a 10-nm-thick FE Hf0.5Zr0.5O2 layer sandwiched between TiN electrodes, which are subjected to a detailed investigation of the structural and functional properties. The robust FE properties of Hf0.5Zr0.5O2 films in capacitors are established by several alternative techniques. We demonstrate a good scalability of TiN/Hf0.5Zr0.5O2/TiN FE capacitors down to 100-nm size and the polarization retention in the test “one transistor-one capacitor” (1T-1C) cells after 1010 writing cycles. The presence of a non-centrosymmetric orthorhombic phase responsible for FE properties in the alloyed polycrystalline Hf0.5Zr0.5O2 films is established by transmission electron microscopy. Given the ability of the ALD technique to grow highly conformal films and multilayered structures, the obtained results indicate the route for the design of FE non-volatile memory devices in 3D integrated circuits.
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7 November 2016
Research Article|
November 08 2016
Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties Available to Purchase
Sergei Zarubin
;
Sergei Zarubin
a)
1
Moscow Institute of Physics and Technology
, Dolgoprudny, Moscow Region 141700, Russia
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Elena Suvorova;
Elena Suvorova
1
Moscow Institute of Physics and Technology
, Dolgoprudny, Moscow Region 141700, Russia
2
A.V. Shubnikov Institute of Crystallography of Russian Academy of Sciences
, Moscow 119333, Russia
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Maksim Spiridonov;
Maksim Spiridonov
1
Moscow Institute of Physics and Technology
, Dolgoprudny, Moscow Region 141700, Russia
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Dmitrii Negrov;
Dmitrii Negrov
1
Moscow Institute of Physics and Technology
, Dolgoprudny, Moscow Region 141700, Russia
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Anna Chernikova;
Anna Chernikova
1
Moscow Institute of Physics and Technology
, Dolgoprudny, Moscow Region 141700, Russia
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Andrey Markeev
;
Andrey Markeev
1
Moscow Institute of Physics and Technology
, Dolgoprudny, Moscow Region 141700, Russia
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Andrei Zenkevich
Andrei Zenkevich
1
Moscow Institute of Physics and Technology
, Dolgoprudny, Moscow Region 141700, Russia
3
NRNU “Moscow Engineering Physics Institute,”
Moscow 115409, Russia
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Sergei Zarubin
1,a)
Elena Suvorova
1,2
Maksim Spiridonov
1
Dmitrii Negrov
1
Anna Chernikova
1
Andrey Markeev
1
Andrei Zenkevich
1,3
1
Moscow Institute of Physics and Technology
, Dolgoprudny, Moscow Region 141700, Russia
2
A.V. Shubnikov Institute of Crystallography of Russian Academy of Sciences
, Moscow 119333, Russia
3
NRNU “Moscow Engineering Physics Institute,”
Moscow 115409, Russia
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
Appl. Phys. Lett. 109, 192903 (2016)
Article history
Received:
June 24 2016
Accepted:
October 09 2016
Connected Content
Citation
Sergei Zarubin, Elena Suvorova, Maksim Spiridonov, Dmitrii Negrov, Anna Chernikova, Andrey Markeev, Andrei Zenkevich; Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties. Appl. Phys. Lett. 7 November 2016; 109 (19): 192903. https://doi.org/10.1063/1.4966219
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