We fabricated fully epitaxial magnetic tunnel junctions with LiF tunnel barriers on Si (100) substrates with high-vacuum electron-beam deposition. By changing the thickness of the LiF barrier, tunnel magnetoresistance of up to 90% at 77 K (17% at room temperature) was observed at = 2.8 nm. The magnetoresistance ratio as a function of the LiF barrier thickness shows a similar trend with that in magnetic tunnel junctions using epitaxial MgO barriers. There is a rapid decrease of the magnetoresistance ratio with increasing bias-voltage and temperature, indicating the presence of imperfections in the LiF barriers.
References
1.
H.
Meng
, R.
Sbiaa
, M. A. K.
Akhtar
, R. S.
Liu
, V. B.
Naik
, and C. C.
Wang
, Appl. Phys. Lett.
100
(12
), 122405
(2012
).2.
J.
Cao
, J.
Kanak
, T.
Stobiecki
, P.
Wisniowski
, and P. P.
Freitas
, IEEE Trans. Magn.
45
(10
), 3464
–3466
(2009
).3.
G. I. R.
Anderson
, H. X.
Wei
, N. A.
Porter
, V.
Harnchana
, A. P.
Brown
, R. M. D.
Brydson
, D. A.
Arena
, J.
Dvorak
, X. F.
Han
, and C. H.
Marrows
, J. Appl. Phys.
105
(6
), 063904
(2009
).4.
X. F.
Liu
and J.
Shi
, Appl. Phys. Lett.
102
(20
), 202401
(2013
).5.
J. S.
Moodera
, L. R.
Kinder
, T. M.
Wong
, and R.
Meservey
, Phys. Rev. Lett.
74
(16
), 3273
–3276
(1995
).6.
S. S. P.
Parkin
, C.
Kaiser
, A.
Panchula
, P. M.
Rice
, B.
Hughes
, M.
Samant
, and S. H.
Yang
, Nat. Mater.
3
, 862
–867
(2004
).7.
S.
Yuasa
, T.
Nagahama
, A.
Fukushima
, Y.
Suzuki
, and K.
Ando
, Nat. Mater.
3
, 868
–871
(2004
).8.
S.
Ikeda
, J.
Hayakawa
, Y.
Ashizawa
, Y. M.
Lee
, K.
Miura
, H.
Hasegawa
, M.
Tsunoda
, F.
Matsukura
, and H.
Ohno
, Appl. Phys. Lett.
93
(8
), 082508
(2008
).9.
W. H.
Butler
, X.-G.
Zhang
, and T. C.
Schulthess
, Phys. Rev. B
63
(5
), 054416
(2001
).10.
J.
Mathon
and A.
Umerski
, Phys. Rev. B
63
(22
), 220403
(2001
).11.
Y.
Ohdaira
, M.
Oogane
, H.
Naganuma
, and Y.
Ando
, J. Phys.: Conf. Ser.
200
(5
), 052019
(2010
).12.
N.
Tezuka
, N.
Ikeda
, S.
Sugimoto
, and K.
Inomata
, Jpn. J. Appl. Phys., Part 2
46
(19
), L454
–L456
(2007
).13.
A. V.
Ramos
, T.
Santos
, G. X.
Miao
, M.-J.
Guittet
, J.-B.
Moussy
, and J. S.
Moodera
, Phys. Rev. B
78
, 180402(R)
(2008
).14.
B.
Li
, G. X.
Miao
, and J. S.
Moodera
, Phys. Rev. B
88
(16
), 161105
(2013
).15.
T. S.
Yoon
, S.
Yoshimura
, M.
Tsunoda
, M.
Takahashi
, B. C.
Park
, Y. W.
Lee
, Y.
Li
, and C. O.
Kim
, J. Magn.
9
(1
), 17
–22
(2004
).16.
X. Y.
Gao
, Q.
Li
, S. D.
Li
, J.
Xu
, Y. Z.
Qin
, X. J.
Shi
, S. S.
Yan
, and G. X.
Miao
, J. Alloys. Compd.
662
, 79
–83
(2016
).17.
F.
Liu
, Y.
Yang
, Q.
Xue
, Z.
Gao
, A.
Chen
, and G. X.
Miao
, AIP Adv.
6
, 085004
(2016
).18.
G. X.
Miao
, J. Y.
Chang
, M. J.
van Veenhuizen
, K.
Thiel
, M.
Seibt
, G.
Eilers
, M.
Münzenberg
, and J. S.
Moodera
, Appl. Phys. Lett.
93
(14
), 142511
(2008
).19.
W. F.
Brinkman
, R. C.
Dynes
, and J. M.
Rowell
, J. Appl. Phys.
41
(5
), 1915
–1921
(1970
).20.
C. W.
Miller
and D. D.
Belyea
, J. Appl. Phys.
105
(9
), 094505
(2009
).21.
C. W.
Miller
, J. Magn. Magn. Mater.
321
, 2563
–2565
(2009
).22.
J. G.
Simmons
, J. Appl. Phys.
34
(6
), 1793
–1803
(1963
).23.
M.
Bowen
, V.
Cros
, F.
Petroff
, A.
Fert
, C.
Martínez Boubeta
, J. L.
Costa-Krämer
, J. V.
Anguita
, A.
Cebollada
, F.
Briones
, J. M.
de Teresa
, L.
Morellón
, M. R.
Ibarra
, F.
Güell
, F.
Peiró
, and A.
Cornet
, Appl. Phys. Lett.
79
(11
), 1655
–1657
(2001
).24.
J.
Faure-Vincent
, C.
Tiusan
, E.
Jouguelet
, F.
Canet
, M.
Sajieddine
, C.
Bellouard
, E.
Popova
, M.
Hehn
, F.
Montaigne
, and A.
Schuhl
, Appl. Phys. Lett.
82
(25
), 4507
–4509
(2003
).25.
T.
Moriyama
, C.
Ni
, W. G.
Wang
, X.
Zhang
, and J. Q.
Xiao
, Appl. Phys. Lett.
88
(22
), 222503
(2006
).26.
C. W.
Miller
, Z. P.
Li
, J.
Åkerman
, and I. K.
Schuller
, Appl. Phys. Lett.
90
(4
), 043513
(2007
).27.
D. D.
Djayaprawira
, K.
Tsunekawa
, M.
Nagai
, H.
Maehara
, S.
Yamagata
, and N.
Watanabe
, Appl. Phys. Lett.
86
(9
), 092502
(2005
).28.
J.
Zhang
and R. M.
White
, J. Appl. Phys.
83
(11
), 6512
–6514
(1998
).© 2016 Author(s).
2016
Author(s)
You do not currently have access to this content.