High-current-density indium nitride ultrathin-film transistors on glass substrates Available to Purchase

We investigated basic characteristics of InN films grown on glass substrates and fabricated thin-film transistors with them. It was found that highly c-axis oriented InN films can be obtained by the surface modification of glass substrates with amorphous HfO₂ layers. The electron mobility of the c-axis-oriented InN on HfO₂/glass reached 330 cm² V⁻¹ s⁻¹. We demonstrated that a field effect transistor based on the ultrathin film of highly c-axis-oriented InN exhibited an on/off current ratio as high as 10⁶; in addition, this InN-on-glass device supported current densities greater than 14 mA mm⁻¹. The results indicate that InN-based ultrathin-film transistors are promising electronic devices that enable high-current densities to be achieved on glass substrates.