All electrical manipulation of magnetization is crucial and of great important for spintronics devices for the sake of high speed, reliable operation, and low power consumption. Recently, widespread interests have been aroused to manipulate perpendicular magnetization of a ferromagnetic layer using spin-orbit torque (SOT) without field. We report that a commonly used antiferromagnetic material IrMn can be a promising candidate as a functional layer to realize field-free magnetization switching driven by SOT in which IrMn is employed to act as both the source of effective exchange bias field and SOT source. The critical switching current density within our study is Jc = 2.2 × 107 A/cm2, which is the same magnitude as similar materials such as PtMn. A series of measurements based on anomalous Hall effect was systematically implemented to determine the magnetization switching mechanism. This study offers a possible route for IrMn application in similar structures.
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26 September 2016
Research Article|
September 26 2016
Field-free spin Hall effect driven magnetization switching in Pd/Co/IrMn exchange coupling system
W. J. Kong;
W. J. Kong
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,
Chinese Academy of Sciences
, Beijing 100190, China
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Y. R. Ji;
Y. R. Ji
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,
Chinese Academy of Sciences
, Beijing 100190, China
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X. Zhang;
X. Zhang
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,
Chinese Academy of Sciences
, Beijing 100190, China
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H. Wu;
H. Wu
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,
Chinese Academy of Sciences
, Beijing 100190, China
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Q. T. Zhang;
Q. T. Zhang
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,
Chinese Academy of Sciences
, Beijing 100190, China
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Z. H. Yuan;
Z. H. Yuan
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,
Chinese Academy of Sciences
, Beijing 100190, China
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C. H. Wan;
C. H. Wan
a)
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,
Chinese Academy of Sciences
, Beijing 100190, China
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X. F. Han
;
X. F. Han
b)
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics,
Chinese Academy of Sciences
, Beijing 100190, China
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T. Yu;
T. Yu
2College of Physical Science and Technology,
Sichuan University
, Chengdu 610064, China
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Kenji Fukuda
;
Kenji Fukuda
3Department of Applied Physics,
Tohoku University
, Sendai, Miyagi 980-8579, Japan
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Hiroshi Naganuma;
Hiroshi Naganuma
3Department of Applied Physics,
Tohoku University
, Sendai, Miyagi 980-8579, Japan
4Unitäe Mixte de Physique, CNRS, Thales, Univ. Paris-Sud,
Universitäe Paris-Saclay
, 91767 Palaiseau, France
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Mean-Jue Tung
Mean-Jue Tung
5Material and Chemical Engineering Laboratory,
Industrial Technology Research Institute (ITRI)
, Hsinchu 31040, Taiwan
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a)
Electronic mail xfhan@iphy.ac.cn
b)
Electronic mail wancaihua@iphy.ac.cn
Appl. Phys. Lett. 109, 132402 (2016)
Article history
Received:
July 15 2016
Accepted:
September 10 2016
Citation
W. J. Kong, Y. R. Ji, X. Zhang, H. Wu, Q. T. Zhang, Z. H. Yuan, C. H. Wan, X. F. Han, T. Yu, Kenji Fukuda, Hiroshi Naganuma, Mean-Jue Tung; Field-free spin Hall effect driven magnetization switching in Pd/Co/IrMn exchange coupling system. Appl. Phys. Lett. 26 September 2016; 109 (13): 132402. https://doi.org/10.1063/1.4963235
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