The integration of epitaxial BaTiO3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO3/LaNiO3/SrTiO3 heterostructure is grown monolithically on Si(001). The BaTiO3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm2. This result paves the way towards the fabrication of lead-free BaTiO3 ferroelectric memories on silicon platforms.
High ferroelectric polarization in c-oriented BaTiO3 epitaxial thin films on SrTiO3/Si(001)
M. Scigaj, C. H. Chao, J. Gázquez, I. Fina, R. Moalla, G. Saint-Girons, M. F. Chisholm, G. Herranz, J. Fontcuberta, R. Bachelet, F. Sánchez; High ferroelectric polarization in c-oriented BaTiO3 epitaxial thin films on SrTiO3/Si(001). Appl. Phys. Lett. 19 September 2016; 109 (12): 122903. https://doi.org/10.1063/1.4962836
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