By first principles calculations, we predict that the recently prepared borophene is a pristine two-dimensional monolayer superconductor in which the superconductivity can be significantly enhanced by strain and charge carrier doping. The intrinsic metallic ground state with high density of states at Fermi energy and strong Fermi surface nesting lead to sizeable electron-phonon coupling, making the freestanding borophene superconduct with Tc close to 19.0 K. The tensile strain can increase the Tc to 27.4 K, while the hole doping can notably increase Tc to 34.8 K. The results indicate that the borophene grown on substrates with large lattice parameters or under photoexcitation can show enhanced superconductivity with Tc far above the liquid hydrogen temperature of 20.3 K, which will largely broaden the applications of such promising material.
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19 September 2016
Research Article|
September 23 2016
Enhanced superconductivity by strain and carrier-doping in borophene: A first principles prediction
R. C. Xiao;
R. C. Xiao
a)
1Key Laboratory of Materials Physics,
Institute of Solid State Physics
, Chinese Academy of Sciences, Hefei 230031, China
2
University of Science and Technology of China
, Hefei 230026, China
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D. F. Shao
;
D. F. Shao
a)
1Key Laboratory of Materials Physics,
Institute of Solid State Physics
, Chinese Academy of Sciences, Hefei 230031, China
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W. J. Lu;
W. J. Lu
b)
1Key Laboratory of Materials Physics,
Institute of Solid State Physics
, Chinese Academy of Sciences, Hefei 230031, China
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H. Y. Lv;
H. Y. Lv
1Key Laboratory of Materials Physics,
Institute of Solid State Physics
, Chinese Academy of Sciences, Hefei 230031, China
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J. Y. Li
;
J. Y. Li
1Key Laboratory of Materials Physics,
Institute of Solid State Physics
, Chinese Academy of Sciences, Hefei 230031, China
2
University of Science and Technology of China
, Hefei 230026, China
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Y. P. Sun
Y. P. Sun
c)
1Key Laboratory of Materials Physics,
Institute of Solid State Physics
, Chinese Academy of Sciences, Hefei 230031, China
3High Magnetic Field Laboratory,
Chinese Academy of Sciences
, Hefei 230031, China
4Collaborative Innovation Center of Microstructures,
Nanjing University
, Nanjing 210093, China
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a)
R. C. Xiao and D. F. Shao contributed equally to this work.
b)
Electronic mail: [email protected]
c)
Electronic mail: [email protected]
Appl. Phys. Lett. 109, 122604 (2016)
Article history
Received:
June 07 2016
Accepted:
September 08 2016
Citation
R. C. Xiao, D. F. Shao, W. J. Lu, H. Y. Lv, J. Y. Li, Y. P. Sun; Enhanced superconductivity by strain and carrier-doping in borophene: A first principles prediction. Appl. Phys. Lett. 19 September 2016; 109 (12): 122604. https://doi.org/10.1063/1.4963179
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