In this study, the growth of (111)-oriented epitaxial and textured YO1.5-HfO2 (0.07:0.93 ratio) films using the pulsed laser deposition method is presented. Epitaxial films were prepared on ITO//(111)yttria-stabilized zirconia (YSZ) substrates (ITO: Sn-doped In2O3; YSZ: yttria-stabilized zirconia), while textured films were prepared on (111)Pt/TiOx/SiO2//Si substrates with and without an ITO buffer layer via the grain on grain coherent growth. Inserting an ITO layer increased the volume fraction of the ferroelectric orthorhombic phase. Both the epitaxial and uniaxially textured films exhibited similar ferroelectricity with a remanent polarization of around 10 μC/cm2 and a coercive field of 1.9 to 2.0 MV/cm. These results present us with a way of obtaining stable and uniform ferroelectric properties for each grain and device cells consisting of a small number of grains. This opens the door for ultimately miniaturized ferroelectric devices, such as ferroelectric field effect transistors with small gate length and resistive random access memory using ferroelectric tunnel junctions.
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12 September 2016
Research Article|
September 12 2016
Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices
Kiliha Katayama;
Kiliha Katayama
1Department of Innovative and Engineered Materials
, Tokyo Institute of Technology
, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Takao Shimizu;
Takao Shimizu
2Materials Research Center for Element Strategy
, Tokyo Institute of Technology
, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Osami Sakata;
Osami Sakata
3Synchrotron X-ray Station at SPring-8 and Synchrotron X-ray Group,
National Institute for Materials Science (NIMS)
, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
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Takahisa Shiraishi;
Takahisa Shiraishi
4Institute for Materials Research,
Tohoku University
, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Syogo Nakamura;
Syogo Nakamura
4Institute for Materials Research,
Tohoku University
, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Takanori Kiguchi;
Takanori Kiguchi
4Institute for Materials Research,
Tohoku University
, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Akihiro Akama;
Akihiro Akama
4Institute for Materials Research,
Tohoku University
, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Toyohiko J. Konno;
Toyohiko J. Konno
4Institute for Materials Research,
Tohoku University
, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Hiroshi Uchida
;
Hiroshi Uchida
5Department of Materials and Life Sciences,
Sophia University
, Chiyoda, Tokyo 102-8554, Japan
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Hiroshi Funakubo
Hiroshi Funakubo
a)
1Department of Innovative and Engineered Materials
, Tokyo Institute of Technology
, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
2Materials Research Center for Element Strategy
, Tokyo Institute of Technology
, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
6School of Materials and Chemical Technology,
Tokyo Institute of Technology
, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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a)
E-mail: [email protected]
Appl. Phys. Lett. 109, 112901 (2016)
Article history
Received:
June 02 2016
Accepted:
August 26 2016
Citation
Kiliha Katayama, Takao Shimizu, Osami Sakata, Takahisa Shiraishi, Syogo Nakamura, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Hiroshi Uchida, Hiroshi Funakubo; Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices. Appl. Phys. Lett. 12 September 2016; 109 (11): 112901. https://doi.org/10.1063/1.4962431
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