The ballistic filtering property of nanoscale crosses was used to investigate the effect of perpendicular magnetic fields on the ballistic transport of electrons on wide band-gap GaN heterostructures. The straight scattering-less trajectory of electrons was modified by a perpendicular magnetic field which produced a strong non-linear behavior in the measured output voltage of the ballistic filters and allowed the observation of semi-classical and quantum effects, such as quenching of the Hall resistance and manifestation of the last plateau, in excellent agreement with the theoretical predictions. A large measured phase coherence length of 190 nm allowed the observation of universal quantum fluctuations and weak localization of electrons due to quantum interference up to ∼25 K. This work also reveals the prospect of wide band-gap GaN semiconductors as a platform for basic transport and quantum studies, whose properties allow the investigation of ballistic transport and quantum phenomena at much larger voltages and temperatures than in other semiconductors.
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Research Article| September 07 2016
Magneto-ballistic transport in GaN nanowires
Giovanni Santoruvo ;
Dmitry Ovchinnikov ;
Giovanni Santoruvo, Adrien Allain, Dmitry Ovchinnikov, Elison Matioli; Magneto-ballistic transport in GaN nanowires. Appl. Phys. Lett. 5 September 2016; 109 (10): 103102. https://doi.org/10.1063/1.4962332
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