Piezoresponse force microscopy (PFM) has provided advanced nanoscale understanding and analysis of ferroelectric and piezoelectric properties. In PFM-based studies, electromechanical strain induced by the converse piezoelectric effect is probed and analyzed as a PFM response. However, electromechanical strain can also arise from several non-piezoelectric origins that may lead to a misinterpretation of the observed response. Among them, electrostatic interaction can significantly affect the PFM response. Nonetheless, previous studies explored solely the influence of electrostatic interaction on the PFM response under the situation accompanied with polarization switching. Here, we show the influence of the electrostatic interaction in the absence of polarization switching by using unipolar voltage sweep. The obtained results reveal that the electromechanical neutralization between piezoresponse of polarization and electrostatic interaction plays a crucial role in the observed ferroelectric-like hysteresis loop despite the absence of polarization switching. Thus, our work can provide a basic guideline for the correct interpretation of the hysteresis loop in PFM-based studies.
Skip Nav Destination
Article navigation
5 September 2016
Research Article|
September 06 2016
Ferroelectric-like hysteresis loop originated from non-ferroelectric effects
Bora Kim;
Bora Kim
1School of Advanced Materials Science and Engineering,
Sungkyunkwan University (SKKU)
, Suwon 16419, South Korea
Search for other works by this author on:
Daehee Seol;
Daehee Seol
1School of Advanced Materials Science and Engineering,
Sungkyunkwan University (SKKU)
, Suwon 16419, South Korea
Search for other works by this author on:
Shinbuhm Lee;
Shinbuhm Lee
2Materials Science and Technology Division,
Oak Ridge National Laboratory
, Oak Ridge, Tennessee 37831, USA
3Department of Emerging Materials Science,
Daegu Gyeongbuk Institute of Science and Technology
, Daegu 42988, South Korea
Search for other works by this author on:
Ho Nyung Lee;
Ho Nyung Lee
2Materials Science and Technology Division,
Oak Ridge National Laboratory
, Oak Ridge, Tennessee 37831, USA
Search for other works by this author on:
Yunseok Kim
Yunseok Kim
a)
1School of Advanced Materials Science and Engineering,
Sungkyunkwan University (SKKU)
, Suwon 16419, South Korea
Search for other works by this author on:
a)
Electronic mail: [email protected]
Appl. Phys. Lett. 109, 102901 (2016)
Article history
Received:
June 20 2016
Accepted:
August 23 2016
Citation
Bora Kim, Daehee Seol, Shinbuhm Lee, Ho Nyung Lee, Yunseok Kim; Ferroelectric-like hysteresis loop originated from non-ferroelectric effects. Appl. Phys. Lett. 5 September 2016; 109 (10): 102901. https://doi.org/10.1063/1.4962387
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.
Related Content
Electrostatic effect on off-field ferroelectric hysteresis loop in piezoresponse force microscopy
Appl. Phys. Lett. (April 2020)
Electrostatic contribution to hysteresis loop in piezoresponse force microscopy
Appl. Phys. Lett. (April 2019)
Influence of the interfacing with an electrically inhomogeneous bottom electrode on the ferroelectric properties of epitaxial PbTiO3
Appl. Phys. Lett. (November 2013)
Role of measurement voltage on hysteresis loop shape in Piezoresponse Force Microscopy
Appl. Phys. Lett. (November 2012)
Polarization-induced resistive switching behaviors in complex oxide heterostructures
Appl. Phys. Lett. (September 2015)