For a better comprehension of hydrogen intercalation of graphene grown on a silicon carbide substrate, an advanced analytical technique is required. We report that with a carefully established measurement procedure it is possible to obtain a reliable and reproducible depth profile of bi-layer graphene (theoretical thickness of 0.69 nm) grown on the silicon carbide substrate by the Chemical Vapor Deposition method. Furthermore, we show that with depth resolution as good as 0.2 nm/decade, both hydrogen coming from the intercalation process and organic contamination can be precisely localized. As expected, hydrogen was found at the interface between graphene and the SiC substrate, while organic contamination was accumulated on the surface of graphene and did not penetrate into it. Such a precise measurement may prove to be invaluable for further characterization of 2D materials.
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4 July 2016
Research Article|
July 07 2016
Secondary ion mass spectroscopy depth profiling of hydrogen-intercalated graphene on SiC
Paweł Piotr Michałowski;
Paweł Piotr Michałowski
a)
1
Institute of Electronic Materials Technology
, Wólczyńska 133, 01-919 Warsaw, Poland
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Wawrzyniec Kaszub;
Wawrzyniec Kaszub
1
Institute of Electronic Materials Technology
, Wólczyńska 133, 01-919 Warsaw, Poland
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Alexandre Merkulov;
Alexandre Merkulov
2
CAMECA
, 29 quai des Grésillons, 92622 Gennevilliers Cedex, France
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Włodek Strupiński
Włodek Strupiński
1
Institute of Electronic Materials Technology
, Wólczyńska 133, 01-919 Warsaw, Poland
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
Appl. Phys. Lett. 109, 011904 (2016)
Article history
Received:
January 20 2016
Accepted:
June 28 2016
Citation
Paweł Piotr Michałowski, Wawrzyniec Kaszub, Alexandre Merkulov, Włodek Strupiński; Secondary ion mass spectroscopy depth profiling of hydrogen-intercalated graphene on SiC. Appl. Phys. Lett. 4 July 2016; 109 (1): 011904. https://doi.org/10.1063/1.4958144
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