Continuous-wave blue semipolar III-nitride laser diodes were fabricated with highly vertical, smooth, and uniform mirror facets produced by chemically assisted ion beam etching. Uniform mirror facets are a requirement for accurate experimental determination of internal laser parameters, including internal loss and injection efficiency, which were determined to be 9 cm−1 and 73%, respectively, using the cavity length dependent method. The cavity length of the uncoated devices was varied from 900 μm to 1800 μm, with threshold current densities ranging from 3 kA/cm2 to 9 kA/cm2 and threshold voltages ranging from 5.5 V to 7 V. The experimentally determined internal loss was found to be in good agreement with a calculated value of 9.5 cm−1 using a 1D mode solver. The loss in each layer was calculated and in light of the analysis several modifications to the laser design are proposed.
Skip Nav Destination
Article navigation
29 February 2016
Research Article|
March 02 2016
Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar III-nitride laser diodes with chemically assisted ion beam etched facets
Daniel L. Becerra
;
Daniel L. Becerra
a)
1Materials Department,
University of California
, Santa Barbara, California 93106, USA
Search for other works by this author on:
Leah Y. Kuritzky;
Leah Y. Kuritzky
1Materials Department,
University of California
, Santa Barbara, California 93106, USA
Search for other works by this author on:
Joseph Nedy;
Joseph Nedy
2Department of Electrical and Computer Engineering,
University of California
, Santa Barbara, California 93106, USA
Search for other works by this author on:
Arwa Saud Abbas;
Arwa Saud Abbas
1Materials Department,
University of California
, Santa Barbara, California 93106, USA
Search for other works by this author on:
Arash Pourhashemi;
Arash Pourhashemi
1Materials Department,
University of California
, Santa Barbara, California 93106, USA
Search for other works by this author on:
Robert M. Farrell;
Robert M. Farrell
1Materials Department,
University of California
, Santa Barbara, California 93106, USA
Search for other works by this author on:
Daniel A. Cohen;
Daniel A. Cohen
1Materials Department,
University of California
, Santa Barbara, California 93106, USA
Search for other works by this author on:
Steven P. DenBaars;
Steven P. DenBaars
1Materials Department,
University of California
, Santa Barbara, California 93106, USA
2Department of Electrical and Computer Engineering,
University of California
, Santa Barbara, California 93106, USA
Search for other works by this author on:
James S. Speck;
James S. Speck
1Materials Department,
University of California
, Santa Barbara, California 93106, USA
Search for other works by this author on:
Shuji Nakamura
Shuji Nakamura
1Materials Department,
University of California
, Santa Barbara, California 93106, USA
2Department of Electrical and Computer Engineering,
University of California
, Santa Barbara, California 93106, USA
Search for other works by this author on:
a)
Author to whom correspondence should be addressed. Electronic mail: dbecerra@engineering.ucsb.edu
Appl. Phys. Lett. 108, 091106 (2016)
Article history
Received:
January 04 2016
Accepted:
February 20 2016
Citation
Daniel L. Becerra, Leah Y. Kuritzky, Joseph Nedy, Arwa Saud Abbas, Arash Pourhashemi, Robert M. Farrell, Daniel A. Cohen, Steven P. DenBaars, James S. Speck, Shuji Nakamura; Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar III-nitride laser diodes with chemically assisted ion beam etched facets. Appl. Phys. Lett. 29 February 2016; 108 (9): 091106. https://doi.org/10.1063/1.4943143
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00