A method for determining deep trapping lifetime in semiconductors using an impedance spectroscopy is proposed. A unique feature of the method is the simultaneous determination of the drift mobility and deep trapping lifetime in thin-film electronic devices. The validity of the proposed method is examined by numerical calculation. Simultaneous determinations of the drift mobility and deep trapping lifetime using this method are demonstrated in prototypical hole transporting organic semiconductors.

Topics
Localized states, Photoconductivity, Transport properties, Electronic circuits, Electronic devices, Organic semiconductors, Solar cells, Electrochemical impedance spectroscopy, Thin films, Visual system
© 2016 AIP Publishing LLC.
2016
AIP Publishing LLC
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