We present a method to fabricate top-gated field-effect devices in a LaAlO3/SrTiO3 two-dimensional electron gas (2-DEG). Prior to the gate deposition, the realisation of micron size conducting channels in the 2-DEG is achieved by an ion-irradiation with high-energy oxygen ions. After identifying the ion fluence as the key parameter that determines the electrical transport properties of the channels, we demonstrate the field-effect operation. At low temperature, the normal state resistance and the superconducting Tc can be tuned over a wide range by a top-gate voltage without any leakage. A superconductor-to-insulator quantum phase transition is observed for a strong depletion of the 2-DEG.
Top-gated field-effect LaAlO3/SrTiO3 devices made by ion-irradiation
S. Hurand, A. Jouan, C. Feuillet-Palma, G. Singh, E. Lesne, N. Reyren, A. Barthélémy, M. Bibes, J. E. Villegas, C. Ulysse, M. Pannetier-Lecoeur, M. Malnou, J. Lesueur, N. Bergeal; Top-gated field-effect LaAlO3/SrTiO3 devices made by ion-irradiation. Appl. Phys. Lett. 1 February 2016; 108 (5): 052602. https://doi.org/10.1063/1.4941672
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