ZnO films with a c-axis significantly inclined away from the surface normal were grown by a remote plasma sputtering technique at room temperature. The films were used to make solidly mounted resonators (SMRs) operating in shear mode at a resonant frequency of 1.35 GHz. Control of the ZnO microstructure was achieved using a polycrystalline AlN seed layer which can be added on top of a sputtered acoustic mirror to give a complete SMR device. The ZnO was reactively sputtered in an atmosphere of argon and oxygen from a zinc target. The c-axis of the ZnO was estimated to be at an angle of ∼45° to the surface normal. SMRs were measured to have quality factors (Q) of up to 140 and effective electromechanical coupling coefficients of up to 2.2% in air. Although an inclined c-axis can be achieved with direct growth onto the acoustic mirror, it is shown that the AlN seed layer provides higher coupling coefficients and narrower inclination angular distribution. The responses of the devices in liquids of different viscosities (acetone, water, and AZ5214E photoresist) were measured. The shear mode Q decreased by 45% in acetone, 72% in water, and 92% in AZ5214E.
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18 January 2016
Research Article|
January 20 2016
Room temperature sputtering of inclined c-axis ZnO for shear mode solidly mounted resonators
G. Rughoobur
;
G. Rughoobur
1Electrical Engineering Division, Department of Engineering,
University of Cambridge
, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
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M. DeMiguel-Ramos;
M. DeMiguel-Ramos
1Electrical Engineering Division, Department of Engineering,
University of Cambridge
, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
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T. Mirea;
T. Mirea
2GMME-CEMDATIC-ETSI de Telecomunicación,
Universidad Politécnica de Madrid
, 28040 Madrid, Spain
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M. Clement;
M. Clement
2GMME-CEMDATIC-ETSI de Telecomunicación,
Universidad Politécnica de Madrid
, 28040 Madrid, Spain
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J. Olivares;
J. Olivares
2GMME-CEMDATIC-ETSI de Telecomunicación,
Universidad Politécnica de Madrid
, 28040 Madrid, Spain
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B. Díaz-Durán;
B. Díaz-Durán
2GMME-CEMDATIC-ETSI de Telecomunicación,
Universidad Politécnica de Madrid
, 28040 Madrid, Spain
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J. Sangrador;
J. Sangrador
2GMME-CEMDATIC-ETSI de Telecomunicación,
Universidad Politécnica de Madrid
, 28040 Madrid, Spain
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I. Miele;
I. Miele
1Electrical Engineering Division, Department of Engineering,
University of Cambridge
, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
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W. I. Milne;
W. I. Milne
1Electrical Engineering Division, Department of Engineering,
University of Cambridge
, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
3College of Information Science and Electronic Engineering,
Zhejiang University
, Hangzhou, 310027, People's Republic of China
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E. Iborra
;
E. Iborra
2GMME-CEMDATIC-ETSI de Telecomunicación,
Universidad Politécnica de Madrid
, 28040 Madrid, Spain
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A. J. Flewitt
A. J. Flewitt
a)
1Electrical Engineering Division, Department of Engineering,
University of Cambridge
, 9 JJ Thomson Avenue, Cambridge, CB3 0FA, United Kingdom
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected], Tel.: +44 1223 748332, Fax: +44 1223 748348.
Appl. Phys. Lett. 108, 034103 (2016)
Article history
Received:
December 21 2015
Accepted:
January 12 2016
Citation
G. Rughoobur, M. DeMiguel-Ramos, T. Mirea, M. Clement, J. Olivares, B. Díaz-Durán, J. Sangrador, I. Miele, W. I. Milne, E. Iborra, A. J. Flewitt; Room temperature sputtering of inclined c-axis ZnO for shear mode solidly mounted resonators. Appl. Phys. Lett. 18 January 2016; 108 (3): 034103. https://doi.org/10.1063/1.4940683
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