An H-terminated diamond field-effect-transistor (FET) with a ferroelectric vinylidene fluoride (VDF)-trifluoroethylene (TrFE) copolymer gate insulator was fabricated. The VDF-TrFE film was deposited on the H-terminated diamond by the spin-coating method and low-temperature annealing was performed to suppress processing damage to the H-terminated diamond surface channel layer. The fabricated FET structure showed the typical properties of depletion-type p-channel FET and showed clear saturation of the drain current with a maximum value of 50 mA/mm. The drain current versus gate voltage curves of the proposed FET showed clockwise hysteresis loops due to the ferroelectricity of the VDF-TrFE gate insulator, and the memory window width was 19 V, when the gate voltage was swept from 20 to −20 V. The maximum on/off current ratio and the linear mobility were 108 and 398 cm2/V s, respectively. In addition, we modulated the drain current of the fabricated FET structure via the remnant polarization of the VDF-TrFE gate and obtained an on/off current ratio of 103 without applying a DC gate voltage.
H-terminated diamond field effect transistor with ferroelectric gate insulator
Ryota Karaya, Hiroki Furuichi, Takashi Nakajima, Norio Tokuda, Takeshi Kawae; H-terminated diamond field effect transistor with ferroelectric gate insulator. Appl. Phys. Lett. 13 June 2016; 108 (24): 242101. https://doi.org/10.1063/1.4953777
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