Tunnel magnetoresistance ratios of up to 40% are measured between 10 K and 300 K when the highly spin-polarized compensated ferrimagnet, Mn2RuxGa, is integrated into MgO-based perpendicular magnetic tunnel junctions. Temperature and bias dependences of the tunnel magnetoresistance effect, with a sign change near −0.2 V, reflect the structure of the Mn2RuxGa interface density of states. Despite magnetic moment vanishing at a compensation temperature of 200 K for , the tunnel magnetoresistance ratio remains non-zero throughout the compensation region, demonstrating that the spin-transport is governed by one of the Mn sub-lattices only. Broad temperature range magnetic field immunity of at least 0.5 T is demonstrated in the same sample. The high spin polarization and perpendicular magnetic anisotropy make Mn2RuxGa suitable for applications in both non-volatile magnetic random access memory cells and terahertz spin-transfer oscillators.
Tunnelling magnetoresistance of the half-metallic compensated ferrimagnet Mn2RuxGa
Present address: European Synchrotron Radiation Facility (ESRF), BP 220, F-38043 Grenoble Cedex, France
K. Borisov, D. Betto, Y.-C. Lau, C. Fowley, A. Titova, N. Thiyagarajah, G. Atcheson, J. Lindner, A. M. Deac, J. M. D. Coey, P. Stamenov, K. Rode; Tunnelling magnetoresistance of the half-metallic compensated ferrimagnet Mn2RuxGa. Appl. Phys. Lett. 9 May 2016; 108 (19): 192407. https://doi.org/10.1063/1.4948934
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