The electrical properties of ZrO2 and HfO2 gate dielectrics on n-InAs were evaluated. Particularly, an in situ surface treatment method including cyclic nitrogen plasma and trimethylaluminum pulses was used to improve the quality of the high-κ oxides. The quality of the InAs-oxide interface was evaluated with a full equivalent circuit model developed for narrow band gap metal-oxide-semiconductor (MOS) capacitors. Capacitance–voltage (C–V) measurements exhibit a total trap density profile with a minimum of 1 × 1012 cm−2 eV−1 and 4 × 1012 cm−2 eV−1 for ZrO2 and HfO2, respectively, both of which are comparable to the best values reported for high-κ/III-V devices. Our simulations showed that the measured capacitance is to a large extent affected by the border trap response suggesting a very low density of interface traps. Charge trapping in MOS structures was also investigated using the hysteresis in the C–V measurements. The experimental results demonstrated that the magnitude of the hysteresis increases with increase in accumulation voltage, indicating an increase in the charge trapping response.
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28 March 2016
Research Article|
April 01 2016
ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment
Aein S. Babadi;
Aein S. Babadi
a)
Department of Electrical and Information Technology,
Lund University
, Lund SE-22100, Sweden
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Erik Lind;
Erik Lind
Department of Electrical and Information Technology,
Lund University
, Lund SE-22100, Sweden
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Lars-Erik Wernersson
Lars-Erik Wernersson
Department of Electrical and Information Technology,
Lund University
, Lund SE-22100, Sweden
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a)
Electronic mail: Aein.Shiri_Babadi@EIT.LTH.SE
Appl. Phys. Lett. 108, 132904 (2016)
Article history
Received:
November 23 2015
Accepted:
March 24 2016
Citation
Aein S. Babadi, Erik Lind, Lars-Erik Wernersson; ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment. Appl. Phys. Lett. 28 March 2016; 108 (13): 132904. https://doi.org/10.1063/1.4945430
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