Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in order to measure their residual carrier concentration. For this purpose, an SSRM calibration profile has been developed on homoepitaxial ZnO:Ga multilayer staircase structures grown by molecular beam epitaxy. The Ga density measured by SIMS varies in the 1.7 × 1017 cm−3 to 3 × 1020 cm−3 range. From measurements on such Ga doped multi-layers, a monotonic decrease in SSRM resistance with increasing Ga density was established, indicating SSRM being a well-adapted technique for two dimensional dopant/carrier profiling on ZnO at nanoscale. Finally, relevant SSRM signal contrasts were detected on nid ZnO NWs, and the residual carrier concentration is estimated in the 1–3 × 1018 cm−3 range, in agreement with the result from four-probe measurements.
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28 March 2016
Research Article|
March 30 2016
Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy
L. Wang;
L. Wang
a)
1Institut des Nanotechnologies de Lyon (INL),
Université de Lyon
, CNRS UMR 5270, INSA Lyon, Bat. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne, France
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J. M. Chauveau;
J. M. Chauveau
2
Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA)
, CNRS UPR10, rue Bernard Grégory 06560 Valbonne Sophia Antipolis, France
3Physics Department,
University of Nice Sophia Antipolis (UNS)
, Parc Valrose, 06103 Nice, France
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R. Brenier;
R. Brenier
4Institut Lumière Matière (ILM),
Université de Lyon
, CNRS UMR 5306, Université Claude Bernard Lyon 1
, 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne, France
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V. Sallet;
V. Sallet
5Groupe d'Étude de la Matière Condensée (GEMaC), CNRS-Université de Versailles St Quentin en Yvelines,
Université Paris-Saclay
, 45 Avenue des Etats-Unis, 78035 Versailles, France
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F. Jomard;
F. Jomard
5Groupe d'Étude de la Matière Condensée (GEMaC), CNRS-Université de Versailles St Quentin en Yvelines,
Université Paris-Saclay
, 45 Avenue des Etats-Unis, 78035 Versailles, France
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C. Sartel;
C. Sartel
5Groupe d'Étude de la Matière Condensée (GEMaC), CNRS-Université de Versailles St Quentin en Yvelines,
Université Paris-Saclay
, 45 Avenue des Etats-Unis, 78035 Versailles, France
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G. Brémond
G. Brémond
1Institut des Nanotechnologies de Lyon (INL),
Université de Lyon
, CNRS UMR 5270, INSA Lyon, Bat. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne, France
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a)
Author to whom correspondence should be addressed. Electronic mail: lin.wang@insa-lyon.fr
Appl. Phys. Lett. 108, 132103 (2016)
Article history
Received:
December 16 2015
Accepted:
March 20 2016
Citation
L. Wang, J. M. Chauveau, R. Brenier, V. Sallet, F. Jomard, C. Sartel, G. Brémond; Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopy. Appl. Phys. Lett. 28 March 2016; 108 (13): 132103. https://doi.org/10.1063/1.4945100
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