Scanning spreading resistance microscopy (SSRM) was performed on non-intentionally doped (nid) ZnO nanowires (NWs) grown by metal-organic chemical vapor deposition in order to measure their residual carrier concentration. For this purpose, an SSRM calibration profile has been developed on homoepitaxial ZnO:Ga multilayer staircase structures grown by molecular beam epitaxy. The Ga density measured by SIMS varies in the 1.7 × 1017 cm−3 to 3 × 1020 cm−3 range. From measurements on such Ga doped multi-layers, a monotonic decrease in SSRM resistance with increasing Ga density was established, indicating SSRM being a well-adapted technique for two dimensional dopant/carrier profiling on ZnO at nanoscale. Finally, relevant SSRM signal contrasts were detected on nid ZnO NWs, and the residual carrier concentration is estimated in the 1–3 × 1018 cm−3 range, in agreement with the result from four-probe measurements.
References
1.
Z. L.
Wang
, J. Phys.: Condens. Matter
16
, R829
(2004
).2.
D.
Vanmaekelbergh
and L. K.
van Vugt
, Nanoscale
3
, 2783
(2011
).3.
C.
Soci
, A.
Zhang
, B.
Xiang
, S. A.
Dayeh
, D. P. R.
Aplin
, J.
Park
, X. Y.
Bao
, Y. H.
Lo
, and D.
Wang
, Nano Lett.
7
, 1003
(2007
).4.
P.-C.
Chang
, Z.
Fan
, C.-J.
Chien
, D.
Stichtenoth
, C.
Ronning
, and J. G.
Lu
, Appl. Phys. Lett.
89
, 133113
(2006
).5.
Z.
Fan
, D.
Wang
, P.-C.
Chang
, W.-Y.
Tseng
, and J. G.
Lu
, Appl. Phys. Lett.
85
, 5923
(2004
).6.
R.
Holm
, Electric Contacts: Theory and Application
(Springer
, Berlin
, 1979
), pp. 11
–16
.7.
8.
P.
De Wolf
, R.
Stephenson
, T.
Trenkler
, T.
Clarysse
, T.
Hantschel
, and W.
Vandervorst
, J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct.
18
, 361
(2000
).9.
D.
Álvarez
, J.
Hartwich
, M.
Fouchier
, P.
Eyben
, and W.
Vandervorst
, Appl. Phys. Lett.
82
, 1724
(2003
).10.
L.
Zhang
, H.
Tanimoto
, K.
Adachi
, and A.
Nishiyama
, IEEE Electron Device Lett.
29
, 799
(2008
).11.
T.
Hantschel
, C.
Demeulemeester
, P.
Eyben
, V.
Schulz
, O.
Richard
, H.
Bender
, and W.
Vandervorst
, Phys. Status Solidi A
206
, 2077
(2009
).12.
P.
Eyben
, M.
Xu
, N.
Duhayon
, T.
Clarysse
, S.
Callewaert
, and W.
Vandervorst
, J. Vac. Sci. Technol. B
20
, 471
(2002
).13.
X.
Ou
, P.
Das Kanungo
, R.
Kögler
, P.
Werner
, U.
Gösele
, W.
Skorupa
, and X.
Wang
, Nano Lett.
10
, 171
(2010
).14.
A.
Schulze
, A. S.
Verhulst
, A.
Nazir
, T.
Hantschel
, P.
Eyben
, and W.
Vandervorst
, J. Appl. Phys.
113
, 114310
(2013
).15.
F.
Giannazzo
, V.
Raineri1
, S.
Mirabella
, G.
Impellizzeri
, and F.
Priolo
, Appl. Phys. Lett.
88
, 043117
(2006
).16.
P.
De Wolf
, M.
Geva
, T.
Hantschel
, W.
Vandervorst
, and R. B.
Bylsma
, Appl. Phys. Lett.
73
, 2155
(1998
).17.
R. P.
Lu
, K. L.
Kavanagh
, S. J.
Dixon-Warren
, A.
Kuhl
, A. J.
SpringThorpe
, E.
Griswold
, G.
Hillier
, I.
Calder
, R.
Arés
, and R.
Streater
, J. Vac. Sci. Technol. B
19
, 1662
(2001
).18.
I. S.
Fraser
, R. A.
Oliver
, J.
Sumner
, C.
McAleese
, M. J.
Kappers
, and C. J.
Humphreys
, Appl. Surf. Sci.
253
, 3937
(2007
).19.
M.-T.
Chen
, M.-P.
Lu
, Y.-J.
Wu
, J.
Song
, C.-Y.
Lee
, M.-Y.
Lu
, Y.-C.
Chang
, L.-J.
Chou
, Z. L.
Wang
, and L.-J.
Chen
, Nano Lett.
10
, 4387
(2010
).20.
M.
Lorenz
, B.
Cao
, G.
Zimmermann
, G.
Biehne
, C.
Czekalla
, H.
Frenzel
, M.
Brandt
, H.
von Wenckstern
, and M.
Grundmann
, J. Vac. Sci. Technol. B: Microelectron. Nanometer Struct.
27
, 1693
(2009
).21.
D.
Taïnoff
, M.
Al-Khalfioui
, C.
Deparis
, B.
Vinter
, M.
Teisseire
, C.
Morhain
, and J.-M.
Chauveau
, Appl. Phys. Lett.
98
, 131915
(2011
).22.
Z. L.
Wang
and J.
Song
, Science
312
, 242
(2006
).23.
P.
Eyben
, J.
Mody
, S. C.
Vemula
, and W.
Vandervorst
, J. Vac. Sci. Technol. B
26
, 338
(2008
).24.
P.
Eyben
, S.-C.
Vemula
, T.
Noda
, and W.
Vandervorst
, in 2009 International Workshop on Junction Technology
(IEEE
, 2009
), pp. 74
–78
.25.
H. J.
Ko
, Y. F.
Chen
, S. K.
Hong
, H.
Wenisch
, T.
Yao
, and D. C.
Look
, Appl. Phys. Lett.
77
, 3761
(2000
).26.
S.
Sadofev
, S.
Kalusniak
, P.
Schäfer
, and F.
Henneberger
, Appl. Phys. Lett.
102
, 181905
(2013
).27.
D. C.
Look
, B.
Claflin
, and H. E.
Smith
, Appl. Phys. Lett.
92
, 122108
(2008
).28.
L.
Wang
, J.
Laurent
, J. M.
Chauveau
, V.
Sallet
, F.
Jomard
, and G.
Brémond
, Appl. Phys. Lett.
107
, 192101
(2015
).29.
A. F.
Kohan
, G.
Ceder
, D.
Morgan
, and C. G.
Van de Walle
, Phys. Rev. B
61
, 15019
(2000
).30.
C. G.
Van de Walle
, Phys. Rev. Lett.
85
, 1012
(2000
).31.
S.
Brochen
, M.
Lafossas
, I.-C.
Robin
, P.
Ferret
, F.
Gemain
, J.
Pernot
, and G.
Feuillet
, J. Appl. Phys.
115
, 113508
(2014
).32.
A. D. L.
Bugallo
, F.
Donatini
, C.
Sartel
, V.
Sallet
, and J.
Pernot
, Appl. Phys. Express
8
, 025001
(2015
).33.
P.
De Wolf
, J. Vac. Sci. Technol. B
16
, 355
(1998
).34.
L. J.
Brillson
and Y.
Lu
, J. Appl. Phys.
109
, 121301
(2011
).35.
Q. L.
Gu
, C. K.
Cheung
, C. C.
Ling
, A. M. C.
Ng
, A. B.
Djurišić
, L. W.
Lu
, X. D.
Chen
, S.
Fung
, C. D.
Beling
, and H. C.
Ong
, J. Appl. Phys.
103
, 093706
(2008
).© 2016 AIP Publishing LLC.
2016
AIP Publishing LLC
You do not currently have access to this content.
