A greatly enhanced lateral photovoltage (LPV) triggered by electric pulse has been observed in nano-carbon oxide semiconductor (COS) structures. The original maximal output signal of lateral photovoltage achieved in these structures is 9.8 mV. However, by combining the application of a 60 V voltage pulse with laser illumination, the LPV can reach a very high value of 183 mV and the change ratio after 60 V pulse is nearly 1800%. In addition, the states of these light and electric-pulse triggered COSs are permanently changed, showing a non-volatile characteristic. We attribute this phenomenon to the trapping effect of stimulated electrons in COSs. The work suggests an approach for tailoring LPV-based devices by electric pulse and will be useful for the development of electric pulse modulated photodetectors.

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