The thermal decomposition of Si dioxide layers formed by wet chemical treatment on Si(001) has been studied by low-energy electron microscopy. Independent nucleations of voids occur into the Si oxide layers that open by reaction at the void periphery. Depending on the voids, the reaction rates exhibit large differences via the occurrence of a nonlinear growth of the void radius. This non-steady state regime is attributed to the accumulation of defects and silicon hydroxyl species at the SiO2/Si interface that enhances the silicon oxide decomposition at the void periphery.

1.
S. M.
Sze
,
Semiconductor Devices, Physics and Technology
(
John Wiley & Sons, Inc.
,
1985
).
2.
R.
Tromp
,
G.
Rubloff
,
P.
Balk
,
F.
Legoues
, and
E.
Vanloenen
,
Phys. Rev. Lett.
55
(
21
),
2332
2335
(
1985
).
3.
M.
Liehr
,
J.
Lewis
, and
G.
Rubloff
,
J. Vac. Sci. Technol., A
5
(
4
),
1559
1562
(
1987
).
4.
K.
Johnson
and
T.
Engel
,
Phys. Rev. Lett.
69
(
2
),
339
342
(
1992
).
5.
N.
Miyata
,
H.
Watanabe
, and
M.
Ichikawa
,
Phys. Rev. Lett.
84
(
5
),
1043
1046
(
2000
).
6.
Y.
Enta
,
T.
Nagai
,
T.
Yoshida
,
N.
Ujiie
, and
H.
Nakazawa
,
J. Appl. Phys.
114
(
11
),
114104
(
2013
).
7.
H.
Hibino
,
M.
Uematsu
, and
Y.
Watanabe
,
J. Appl. Phys.
100
(
11
),
113519
(
2006
).
8.
Y.
Kobayashi
and
K.
Sugii
,
J. Vac. Sci. Technol., B
9
(
2
),
748
751
(
1991
).
9.
H.
Watanabe
,
K.
Fujita
, and
M.
Ichikawa
,
Appl. Phys. Lett.
70
(
9
),
1095
1097
(
1997
).
10.
K.
Fujita
,
H.
Watanabe
, and
M.
Ichikawa
,
J. Appl. Phys.
83
(
8
),
4091
4095
(
1998
).
11.
K.
Xue
,
J. B.
Xu
, and
H. P.
Ho
,
Nanotechnology
18
(
48
),
485709
(
2007
).
12.
E. A.
Gulbransen
and
S. A.
Jansson
,
Oxid. Met.
4
(
3
),
181
201
(
1972
).
13.
F.
Smith
and
G.
Ghidini
,
J. Electrochem. Soc.
129
(
6
),
1300
1306
(
1982
).
14.
Y.
Wei
,
R.
Wallace
, and
A.
Seabaugh
,
Appl. Phys. Lett.
69
(
9
),
1270
1272
(
1996
).
15.
N.
Miyata
,
H.
Watanabe
, and
M.
Ichikawa
,
J. Vac. Sci. Technol., B
17
(
3
),
978
982
(
1999
).
16.
A.
Ishizaka
and
Y.
Shiraki
,
J. Electrochem. Soc.
133
(
4
),
666
671
(
1986
).
17.
S.
Fujita
,
S.
Maruno
,
H.
Watanabe
, and
M.
Ichikawa
,
Appl. Phys. Lett.
69
(
5
),
638
640
(
1996
).
18.
H.
Watanabe
,
S.
Fujita
,
S.
Maruno
,
K.
Fujita
, and
M.
Ichikawa
,
Appl. Phys. Lett.
71
(
8
),
1038
1040
(
1997
).
19.

We assume interatomic distance at the periphery: 0.5431/2=0.384nm.

20.
H.
Dallaporta
,
M.
Liehr
, and
J.
Lewis
,
Phys. Rev. B
41
(
8
),
5075
5083
(
1990
).
21.
T.
Hopf
and
A.
Markwitz
,
Surf. Sci.
604
(
17–18
),
1531
1535
(
2010
).
22.
U.
Hakanson
,
B. J.
Ohlsson
,
L.
Montelius
, and
L.
Samuelson
,
J. Vac. Sci. Technol., B
20
(
1
),
226
229
(
2002
).
23.
T.
Aoyama
,
T.
Yamazaki
, and
T.
Ito
,
J. Electrochem. Soc.
143
(
7
),
2280
2285
(
1996
).
24.
Y.
Sugita
and
S.
Watanabe
,
Jpn. J. Appl. Phys., Part 1
37
(
6A
),
3272
3277
(
1998
).
25.
Y.
Sugita
,
S.
Watanabe
, and
N.
Awaji
,
Jpn. J. Appl. Phys., Part 1
35
(
10
),
5437
5443
(
1996
).
26.
Y.
Yamashita
,
K.
Namba
,
Y.
Nakato
,
Y.
Nishioka
, and
H.
Kobayashi
,
J. Appl. Phys.
79
(
9
),
7051
7057
(
1996
).
27.
A.
Gurevich
,
M.
Weldon
,
Y.
Chabal
,
R.
Opila
, and
J.
Sapjeta
,
Appl. Phys. Lett.
74
(
9
),
1257
1259
(
1999
).
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