A reliable on/off switching with an sub-kT/q subthreshold slope (38 mV/dec at room temperature) is experimentally demonstrated with using selectively nucleated laterally crystallized single-grain Pb(Zr,Ti)O3 (PZT) ferroelectric and ZrTiO4 paraelectric thin-film. The combination of ferroelectric and paraelectric thin-film is enabled to form a negative capacitance (NC) at the weak inversion region. However, the PZT grain-boundary easily degrades the NC properties after switching the on/off more than 108 times. It is found that the polarization of PZT is diminished from the path of grain-boundary. Here, we effectively suppress the degradation of NC MOS-FET which did not showed any fatigue even after 108 on/off switching.

At the request of the authors this article is retracted due to duplication of figures and significant overlap with other publications by the authors and because of concerns about the accuracy of the description of the devices and materials from which the reported results were obtained. The authors recognize that these represent serious errors and sincerely apologize for any inconvenience they may have caused. The article is retracted from the scientific record with effect from 17 February 2017.

1.
S.
Salahuddin
and
S.
Datta
,
Nano Lett.
8
,
405
(
2008
).
2.
L.-H.
Ong
,
J.
Osman
, and
D. R.
Tilley
,
Phys. Rev. B
63
,
144109
(
2001
).
3.
G.
Vizdrik
,
S.
Ducharme
,
V. M.
Fridkin
, and
S. G.
Yudin
,
Phys. Rev. B
68
,
094113
(
2003
).
4.
A. I.
Khan
,
K.
Chatterjee
,
B.
Wang
,
S.
Drapcho
,
L.
You
,
C.
Serrao
,
S. R.
Bakaual
,
R.
Ramesh
, and
S.
Salahuddin
,
Nat. Mater.
14
,
182
(
2014
).
5.
V. V.
Zhirnov
and
R. K.
Cavin
,
Nat. Nanotechnol.
3
,
77
(
2008
).
6.
G.
Catalan
,
D.
Jiménez
, and
A.
Gruverman
,
Nat. Mater.
14
,
137
(
2015
).
7.
C. H.
Cheng
and
A.
Chin
,
IEEE Electron Device Lett.
35
,
274
(
2014
).
8.
A.
Rusu
,
G. A.
Salvatore
,
D.
Jiménez
, and
A M.
Ionescu
,
Tech. Dig. - Int. Electron Devices Meet.
2010
,
16.3.1
.
9.
J. F.
Scott
and
M.
Dawber
,
Appl. Phys. Lett.
76
,
3801
(
2000
).
10.
H. M.
Duiker
,
P. D.
Beale
,
J. F.
Scott
,
C. A.
Paz de Araujo
,
B. M.
Melnick
,
J. D.
Cuchiaro
, and
L. D.
McMillan
,
J. Appl. Phys.
68
,
5783
(
1990
).
11.
J.-S.
Lee
and
S.-K.
Joo
,
Appl. Phys. Lett.
81
,
2602
(
2002
).
12.
Z.
Zhao
,
V.
Buscaglia
,
M.
Viviani
,
M. T.
Buscaglia
,
L.
Mitoseriu
,
A.
Testino
,
M.
Nygren
,
M.
Johnsson
, and
P.
Nanni
,
Phys. Rev. B
70
,
024107
(
2004
).
13.
S.
Dasgupta
,
A.
Rajashekhar
,
K.
Majumdar
,
N.
Agrawal
,
A.
Razavieh
,
S.
Trolier-Mckinstry
, and
S.
Datta
,
IEEE J. Explor. Solid-State Comput. Devices Circuits
1
,
43
(
2015
).
14.
J. H.
Park
and
S. K.
Joo
,
IEEE Electron Device Lett.
36
,
1033
(
2015
).
15.
J. H.
Park
,
H. Y.
Kim
,
S. K.
Joo
,
S. W.
Son
,
C. W.
Byun
, and
D.
Ahn
,
J. Vac. Sci. Technol., B
32
,
062201
(
2014
).
16.
J. H.
Park
,
C. W.
Byun
,
Y. W.
Lee
,
H. Y.
Kim
,
S. W.
Son
,
D.
Ahn
, and
S. K.
Joo
,
RSC Adv.
4
,
47564
(
2014
).
17.
J. H.
Park
and
S. K.
Joo
,
IEEE Trans. Device Mater. Reliab.
15
,
417
(
2015
).
18.
C. K.
Kowk
and
S. B.
Desu
,
J. Mater. Res.
9
,
1728
(
1994
).
19.
J.-H.
Park
,
Y.-G.
Yoon
, and
S.-K.
Joo
,
Integr. Ferroelectr.
49
,
13
(
2002
).
20.
C.-Y.
Wu
,
C.-H.
Hsieh
,
C.-W.
Lee
, and
Y.-H.
Wu
,
Appl. Phys. Lett.
106
,
053508
(
2015
).
21.
J. H.
Park
,
G. S.
Jang
,
H. Y.
Kim
,
S. K.
Lee
, and
S. K.
Joo
,
IEEE Electron Device Lett.
36
,
920
(
2015
).
22.
H. T.
Lue
,
C. J.
Wu
, and
T. Y.
Tseng
,
IEEE Trans. Electron Devices
49
,
1790
(
2002
).
23.
A.
Jain
and
M. A.
Alam
,
IEEE Trans. Electron Devices
61
,
2235
(
2014
).
24.
R.
Guo
,
L. E.
Cross
,
S.-E.
Park
,
B.
Noheda
,
D. E.
Cox
, and
G.
Shirane
,
Phys. Rev. Lett.
84
,
5423
(
2000
).
25.
A. K.
Tagantsev
,
I.
Stolichnov
,
E. L.
Colla
, and
N.
Setter
,
J. Appl. Phys.
90
,
1387
(
2001
).
26.
J.
Hector
,
N.
Floquet
,
J. C.
Niepce
,
P.
Gaucher
, and
J. P.
Ganne
,
Microelectron. Eng.
29
,
285
(
1995
).
27.
A.
Cano
and
D.
Jiménez
,
Appl. Phys. Lett.
97
,
133509
(
2010
).
28.
S.
Kasamatsu
,
S.
Watanabe
,
C. S.
Hwang
, and
S.
Han
,
Adv. Mater.
28
,
335
(
2016
).
29.
D.
Jiménez
,
E.
Mairanda
, and
A.
Godoy
,
IEEE Trans. Electron Devices
57
,
2405
(
2010
).
30.
C. H.
Park
and
D. J.
Chadi
,
Phys. Rev. B
57
,
R13961
(
1998
).
31.
B.
Nagaraj
,
S.
Aggarwal
,
T. K.
Song
,
T.
Sawhney
, and
R.
Ramesh
,
Phys. Rev. B.
59
,
16022
(
1999
).
You do not currently have access to this content.