We demonstrate the excitation of localized surface phonon polaritons in an array of sub-diffraction pucks fabricated in an epitaxial layer of gallium nitride (GaN) on a silicon carbide (SiC) substrate. The array is characterized via polarization- and angle-dependent reflection spectroscopy in the mid-infrared, and coupling to several localized modes is observed in the GaN Reststrahlen band (13.4–18.0 μm). The same structure is simulated using finite element methods and the charge density of the modes are studied; transverse dipole modes are identified for the transverse electric and magnetic polarizations and a quadrupole mode is identified for the transverse magnetic polarization. The measured mid-infrared spectrum agrees well with numerically simulated spectra. This work could enable optoelectronic structures and devices that support surface modes at mid- and far-infrared wavelengths.
Skip Nav Destination
CHORUS
Article navigation
24 August 2015
Research Article|
August 24 2015
Localized surface phonon polariton resonances in polar gallium nitride
Kaijun Feng;
Kaijun Feng
a)
1Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
Search for other works by this author on:
William Streyer;
William Streyer
2Department of Electrical and Computer Engineering,
University of Illinois Urbana-Champaign
, Urbana, Illinois 61801, USA
Search for other works by this author on:
S. M. Islam
;
S. M. Islam
1Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
Search for other works by this author on:
Jai Verma;
Jai Verma
1Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
Search for other works by this author on:
Debdeep Jena;
Debdeep Jena
1Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
3School of Electrical and Computer Engineering,
Cornell University
, Ithaca, New York 14850, USA
Search for other works by this author on:
Daniel Wasserman;
Daniel Wasserman
2Department of Electrical and Computer Engineering,
University of Illinois Urbana-Champaign
, Urbana, Illinois 61801, USA
Search for other works by this author on:
Anthony J. Hoffman
Anthony J. Hoffman
1Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556, USA
Search for other works by this author on:
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
Appl. Phys. Lett. 107, 081108 (2015)
Article history
Received:
May 20 2015
Accepted:
August 13 2015
Citation
Kaijun Feng, William Streyer, S. M. Islam, Jai Verma, Debdeep Jena, Daniel Wasserman, Anthony J. Hoffman; Localized surface phonon polariton resonances in polar gallium nitride. Appl. Phys. Lett. 24 August 2015; 107 (8): 081108. https://doi.org/10.1063/1.4929502
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Era of entropy: Synthesis, structure, properties, and applications of high-entropy materials
Christina M. Rost, Alessandro R. Mazza, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Related Content
Engineering absorption and blackbody radiation in the far-infrared with surface phonon polaritons on gallium phosphide
Appl. Phys. Lett. (April 2014)
Temperature-dependent infrared dielectric functions and hybrid phonon-polaritons in wurtzite GaN: A spectroscopic ellipsometry and multiscale simulation study
J. Appl. Phys. (March 2022)
Tamm phonon-polaritons: Localized states from phonon-light interactions
Appl. Phys. Lett. (April 2019)
Observation of phonon-polaritons in thin flakes of hexagonal boron nitride on gold
Appl. Phys. Lett. (April 2018)
Interaction of surface plasmon polaritons in heavily doped GaN microstructures with terahertz radiation
J. Appl. Phys. (March 2016)