We report self-assembled InAs/GaAs quantum dots (QDs) grown on a specially engineered GaAs-on-V-grooved-Si substrate by metal-organic vapor phase epitaxy. Recessed pockets formed on V-groove patterned Si (001) substrates were used to prevent most of the hetero-interfacial stacking faults from extending into the upper QD active region. 1.3 μm room temperature emission from high-density (5.6 × 1010 cm−2) QDs has been obtained, with a narrow full-width-at-half-maximum of 29 meV. Optical quality of the QDs was found to be better than those grown on conventional planar offcut Si templates, as indicated by temperature-dependent photoluminescence analysis. Results suggest great potential to integrate QD lasers on a Si complementary-metal-oxide-semiconductor compatible platform using such GaAs on Si templates.

1.
L.
Di
and
J. E.
Bowers
,
Nat. Photonics
4
,
511
517
(
2010
).
2.
M. J. R.
Heck
and
J. F.
Bauters
,
IEEE J. Sel. Top. Quantum Electron.
19
(
4
),
6100117
(
2013
).
3.
S. F.
Fang
,
K.
Adomi
,
S.
Iyer
,
H.
Morkoç
,
H.
Zabel
,
C.
Choi
, and
N.
Otsuka
,
J. Appl. Phys.
68
,
R31
(
1990
).
4.
T.
Wang
,
H.
Liu
,
A.
Lee
,
F.
Pozzi
, and
A.
Seeds
,
Opt. Express
19
(
12
),
11381
11386
(
2011
).
5.
A.
Lee
,
Q.
Jiang
,
M.
Tang
,
A.
Seeds
, and
H.
Liu
,
Opt. Express
20
(
20
),
22181
22187
(
2012
).
6.
A. D.
Lee
,
Q.
Jiang
,
M.
Tang
,
Y.
Zhang
,
A. J.
Seeds
, and
H.
Liu
,
IEEE J. Sel. Top. Quantum Electron.
19
(
4
),
1901107
(
2013
).
7.
M.
Tang
,
S.
Chen
,
J.
Wu
,
Q.
Jiang
,
V. G.
Dorogan
,
M.
Benamara
,
Y. I.
Mazur
,
G. J.
Salamo
,
A.
Seeds
, and
H.
Liu
,
Opt. Express
22
(
10
),
11528
11535
(
2014
).
8.
S. M.
Chen
,
M. C.
Tang
,
J.
Wu
,
Q.
Jiang
,
V. G.
Dorogan
,
M.
Benamara
,
Y. I.
Mazur
,
G. J.
Salamo
,
A. J.
Seeds
, and
H.
Liu
,
Electron. Lett.
50
(
20
),
1467
1468
(
2014
).
9.
A. Y.
Liu
,
C.
Zhang
,
J.
Norman
,
A.
Snyder
,
D.
Lubyshev
,
J. M.
Fastenau
,
A. W. K.
Liu
,
A. C.
Gossard
, and
J. E.
Bowers
,
Appl. Phys. Lett.
104
,
041104
(
2014
).
10.
A. Y.
Liu
,
R. W.
Herrick
,
O.
Ueda
,
P. M.
Petroff
,
A. C.
Gossard
, and
J. E.
Bowers
,
IEEE J. Sel. Top. Quantum Electron.
21
,
1900708
(
2015
).
11.
D.
Bordel
,
D.
Guimard
,
M.
Rajesh
,
M.
Nishioka
,
E.
Augendre
,
L.
Clavelier
, and
Y.
Arakawa
,
Appl. Phys. Lett.
96
,
043101
(
2010
).
12.
Q.
Li
,
K. W.
Ng
, and
K. M.
Lau
,
Appl. Phys. Lett.
106
,
072105
(
2015
).
13.
Q.
Li
,
C. W.
Tang
, and
K. M.
Lau
,
Appl. Phys. Express
7
(
4
),
045502
(
2014
).
14.
E. C.
Le Ru
,
J.
Fack
, and
R.
Murray
,
Phys. Rev. B
67
,
245318
(
2003
).
15.
R.
Chen
,
H. Y.
Liu
, and
H. D.
Sun
,
J. Appl. Phys.
107
(
1
),
013513
(
2010
).
16.
H. L.
Wang
,
D.
Ning
, and
S. L.
Feng
,
J. Cryst. Growth
209
(
4
),
630
636
(
2000
).
17.
R.
Heitz
,
I.
Mukhametzhanov
,
P.
Chen
, and
A.
Madhukar
,
Phys. Rev. B
58
,
R10151
(
1998
).
18.
Z. Y.
Xu
,
Z. D.
Lu
,
Z. L.
Yuan
,
X. P.
Yang
,
B. Z.
Zheng
, and
J. Z.
Xu
,
Superlattices Microstruct.
23
(
2
),
381
387
(
1998
).
19.
D. P.
Popescu
,
P. G.
Eliseev
,
A.
Stintz
, and
K. J.
Malloy
,
Semicond. Sci. Technol.
19
(
1
),
33
(
2004
).
You do not currently have access to this content.