We have investigated photodetectors based on an AlGaAs/GaAs double barrier structure with a nearby lattice-matched GaInNAs absorption layer. Photons with the telecommunication wavelength μm lead to hole accumulation close to the double barrier inducing a voltage shift of the current-voltage curve, which depends strongly on the bias voltage . A model is proposed describing and the photocurrent response in excellent agreement with the experimental observations. According to the model, an interplay of the resonant tunneling diode (RTD) quantum efficiency , the lifetime of photogenerated and accumulated charge carriers , and the RTD current-voltage relation in the dark determines best working parameters of RTD photodetectors. Limitations and voltage dependencies of the photoresponse are discussed.
Photocurrent-voltage relation of resonant tunneling diode photodetectors
Andreas Pfenning, Fabian Hartmann, Mariama Rebello Sousa Dias, Fabian Langer, Martin Kamp, Leonardo Kleber Castelano, Victor Lopez-Richard, Gilmar Eugenio Marques, Sven Höfling, Lukas Worschech; Photocurrent-voltage relation of resonant tunneling diode photodetectors. Appl. Phys. Lett. 24 August 2015; 107 (8): 081104. https://doi.org/10.1063/1.4929424
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