Quantum dots (QDs) embedded in nanowires represent one of the most promising technologies for applications in quantum photonics. Self-assembled bottom-up fabrication is attractive to overcome the technological challenges involved in a top-down approach, but it needs post-growth investigations in order to understand the self-organization process. We investigate the QD formation by self-segregation in shells as a function of thickness and cross-section morphology. By analysing light emission from several hundreds of emitters, we find that there is a certain thickness threshold for the observation of the QDs. The threshold becomes smaller if a thin AlAs layer is pre-deposited between the GaAs nanowire core and the shell. Our results evidence the development of the quantum emitters during the shell growth and provide more guidance for their use in quantum photonics.
Quantum dots in the GaAs/AlxGa1−xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness
Luca Francaviglia, Yannik Fontana, Sonia Conesa-Boj, Gözde Tütüncüoglu, Léo Duchêne, Mihaela B. Tanasescu, Federico Matteini, Anna Fontcuberta i Morral; Quantum dots in the GaAs/AlxGa1−xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness. Appl. Phys. Lett. 20 July 2015; 107 (3): 033106. https://doi.org/10.1063/1.4927315
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