Here, we propose a strain gauge based on single-layer MoSe2 and WSe2 and show that, in these materials, the strain induced modulation of inter-valley phonon scattering leads to large mobility changes, which in turn result in highly sensitive strain gauges. By employing density-functional theory bandstructure calculations, comprehensive scattering models, and the linearized Boltzmann equation, we explain the physical mechanisms for the high sensitivity to strain of the resistivity in single-layer MoSe2 and WSe2, discuss the reduction of the gauge factor produced by extrinsic scattering sources (e.g., chemical impurities), and propose ways to mitigate such sensitivity degradation.

1.
G.
Schwartz
,
B. C.-K.
Tee
,
J.
Mei
,
A. L.
Appleton
,
D. H.
Kim
,
H.
Wang
, and
Z.
Bao
,
Nat. Commun.
4
,
1859
(
2013
).
2.
D. J.
Cohen
,
D.
Mitra
,
K.
Peterson
, and
M. M.
Maharbiz
,
Nano Lett.
12
,
1821
(
2012
).
3.
Q.
Gao
,
H.
Meguro
,
S.
Okamoto
, and
M.
Kimura
,
Langmuir
28
,
17593
(
2012
).
4.
T.
Yamada
,
Y.
Hayamizu
,
Y.
Yamamoto
,
Y.
Yomogida
,
A.
Izadi-Najafabadi
,
D. N.
Futaba
, and
K.
Hata
,
Nat. Nanotechnol.
6
,
296
(
2011
).
5.
V.
Mosser
,
J.
Suski
,
J.
Goss
, and
E.
Obermeier
,
Sens. Actuators, A
28
,
113
(
1991
).
6.
W.
Hu
,
X.
Niu
,
R.
Zhao
, and
Q.
Pei
,
Appl. Phys. Lett.
102
,
083303
(
2013
).
7.
A.
Smith
,
F.
Niklaus
,
A.
Paussa
,
S.
Vaziri
,
A. C.
Fischer
,
M.
Sterner
,
F.
Forsberg
,
A.
Delin
,
D.
Esseni
,
P.
Palestri
 et al.,
Nano Lett.
13
,
3237
(
2013
).
8.
S.
Gong
,
W.
Schwalb
,
Y.
Wang
,
Y.
Chen
,
Y.
Tang
,
J.
Si
,
B.
Shirinzadeh
, and
W.
Cheng
,
Nat. Commun.
5
,
3132
(
2014
).
9.
N.
Olichwer
,
E. W.
Leib
,
A. H.
Halfar
,
A.
Petrov
, and
T.
Vossmeyer
,
ACS Appl. Mater. Interfaces
4
,
6151
(
2012
).
10.
B.
Radisavljevic
and
A.
Kis
,
Nat. Mater.
12
,
815
(
2013
).
11.
M.
Hosseini
,
M.
Elahi
,
M.
Pourfath
, and
D.
Esseni
,
J. Phys. D: Appl. Phys.
48
,
375104
(
2015
).
12.
M.
Hosseini
,
M.
Elahi
,
M.
Pourfath
, and
D.
Esseni
,
IEEE Trans. Electron Devices
62
,
3192
(
2015
).
13.
J. M.
Soler
,
E.
Artacho
,
J. D.
Gale
,
A.
García
,
J.
Junquera
,
P.
Ordejón
, and
D.
Sánchez-Portal
,
J. Phys.: Condens. Matter
14
,
2745
(
2002
).
14.
A.
Kumar
and
P.
Ahluwalia
,
Eur. J. Phys. B
85
,
186
(
2012
).
15.
C.-H.
Chang
,
X.
Fan
,
S.-H.
Lin
, and
J.-L.
Kuo
,
Phys. Rev. B
88
,
195420
(
2013
).
16.
A.
Ramasubramaniam
,
Phys. Rev. B
86
,
115409
(
2012
).
17.
Z.
Jin
,
X.
Li
,
J. T.
Mullen
, and
K. W.
Kim
,
Phys. Rev. B
90
,
045422
(
2014
).
18.
Z.-Y.
Ong
and
M. V.
Fischetti
,
Phys. Rev. B
88
,
045405
(
2013
).
19.
D.
Esseni
,
P.
Palestri
, and
L.
Selmi
,
Nanoscale MOS Transistors
(
Cambridge University Press
,
Cambridge
,
2011
).
20.
A.
Paussa
and
D.
Esseni
,
J. Appl. Phys.
113
,
093702
(
2013
).
21.
W.
Zhou
,
X.
Zou
,
S.
Najmaei
,
Z.
Liu
,
Y.
Shi
,
J.
Kong
,
J.
Lou
,
P. M.
Ajayan
,
B. I.
Yakobson
, and
J.-C.
Idrobo
,
Nano Lett.
13
,
2615
(
2013
).
22.
K.
Santosh
,
R. C.
Longo
,
R.
Addou
,
R. M.
Wallace
, and
K.
Cho
,
Nanotechnology
25
,
375703
(
2014
).
23.
K.
Santosh
,
R. C.
Longo
,
R. M.
Wallace
, and
K.
Cho
,
J. Appl. Phys.
117
,
135301
(
2015
).
24.
H.-P.
Komsa
and
A. V.
Krasheninnikov
,
Phys. Rev. B
91
,
125304
(
2015
).
25.
H.
Qiu
,
T.
Xu
,
Z.
Wang
,
W.
Ren
,
H.
Nan
,
Z.
Ni
,
Q.
Chen
,
S.
Yuan
,
F.
Miao
,
F.
Song
 et al.,
Nat. Commun.
4
,
2642
(
2013
).
26.
D.
Wickramaratne
,
F.
Zahid
, and
R. K.
Lake
,
J. Chem. Phys.
140
,
124710
(
2014
).
27.
A.
Kormanyos
,
G.
Burkard
,
M.
Gmitra
,
J.
Fabian
,
V.
Zolyomi
,
N. D.
Drummond
, and
V.
Fal'ko
,
2D Mater.
2
,
022001
(
2015
).
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