The unique properties of spin-polarized surface or edge states in topological insulators (TIs) make these quantum coherent systems interesting from the point of view of both fundamental physics and their implementation in low power spintronic devices. Here we present such a study in TIs, through tunneling and noise spectroscopy utilizing TI/Al2O3/Co tunnel junctions with bottom TI electrodes of either Bi2Te3 or Bi2Se3. We demonstrate that features related to the band structure of the TI materials show up in the tunneling conductance and even more clearly through low frequency noise measurements. The bias dependence of 1/f noise reveals peaks at specific energies corresponding to band structure features of the TI. TI tunnel junctions could thus simplify the study of the properties of such quantum coherent systems that can further lead to the manipulation of their spin-polarized properties for technological purposes.
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21 December 2015
Research Article|
December 22 2015
Band structure of topological insulators from noise measurements in tunnel junctions
Juan Pedro Cascales;
Juan Pedro Cascales
a)
1Dpto. Fisica Materia Condensada C3, Instituto Nicolas Cabrera (INC), Condensed Matter Physics Institute (IFIMAC),
Universidad Autonoma de Madrid
, Madrid 28049, Spain
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Isidoro Martínez;
Isidoro Martínez
1Dpto. Fisica Materia Condensada C3, Instituto Nicolas Cabrera (INC), Condensed Matter Physics Institute (IFIMAC),
Universidad Autonoma de Madrid
, Madrid 28049, Spain
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Ferhat Katmis;
Ferhat Katmis
2Department of Physics,
Massachusetts Institute of Technology
, Cambridge, Massachusetts 02139, USA
3Francis Bitter Magnet Laboratory,
Massachusetts Institute of Technology
, Cambridge, Massachusetts 02139, USA
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Cui-Zu Chang;
Cui-Zu Chang
2Department of Physics,
Massachusetts Institute of Technology
, Cambridge, Massachusetts 02139, USA
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Rubén Guerrero;
Rubén Guerrero
4
Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia)
, Cantoblanco, 28049 Madrid, Spain
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Jagadeesh S. Moodera;
Jagadeesh S. Moodera
2Department of Physics,
Massachusetts Institute of Technology
, Cambridge, Massachusetts 02139, USA
3Francis Bitter Magnet Laboratory,
Massachusetts Institute of Technology
, Cambridge, Massachusetts 02139, USA
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Farkhad G. Aliev
Farkhad G. Aliev
b)
1Dpto. Fisica Materia Condensada C3, Instituto Nicolas Cabrera (INC), Condensed Matter Physics Institute (IFIMAC),
Universidad Autonoma de Madrid
, Madrid 28049, Spain
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a)
Electronic mail: juanpedro.cascales@uam.es
b)
Electronic mail: farkhad.aliev@uam.es
Appl. Phys. Lett. 107, 252402 (2015)
Article history
Received:
September 04 2015
Accepted:
December 06 2015
Citation
Juan Pedro Cascales, Isidoro Martínez, Ferhat Katmis, Cui-Zu Chang, Rubén Guerrero, Jagadeesh S. Moodera, Farkhad G. Aliev; Band structure of topological insulators from noise measurements in tunnel junctions. Appl. Phys. Lett. 21 December 2015; 107 (25): 252402. https://doi.org/10.1063/1.4938243
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