In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In0.53Ga0.47As for high-κ top-gate oxide deposition. X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor capacitors (MOSCAPs) demonstrate that Ar ion treatment removes the native oxide on In0.53Ga0.47As. The XPS spectra of Ar treated In0.53Ga0.47As show a decrease in the AsOx and GaOx signal intensities, and the MOSCAPs show higher accumulation capacitance (Cacc), along with reduced frequency dispersion. In addition, Ar treatment is found to suppress the interface trap density (Dit), which thereby led to a reduction in the threshold voltage (Vth) degradation during constant voltage stress and relaxation. These results outline the potential of surface treatment for III-V channel metal-oxide-semiconductor devices and application to non-planar device process.
Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
Donghyi Koh, Seung Heon Shin, Jaehyun Ahn, Sushant Sonde, Hyuk-Min Kwon, Tommaso Orzali, Dae-Hyun Kim, Tae-Woo Kim, Sanjay K. Banerjee; Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device. Appl. Phys. Lett. 2 November 2015; 107 (18): 183509. https://doi.org/10.1063/1.4935248
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