In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In0.53Ga0.47As for high-κ top-gate oxide deposition. X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor capacitors (MOSCAPs) demonstrate that Ar ion treatment removes the native oxide on In0.53Ga0.47As. The XPS spectra of Ar treated In0.53Ga0.47As show a decrease in the AsOx and GaOx signal intensities, and the MOSCAPs show higher accumulation capacitance (Cacc), along with reduced frequency dispersion. In addition, Ar treatment is found to suppress the interface trap density (Dit), which thereby led to a reduction in the threshold voltage (Vth) degradation during constant voltage stress and relaxation. These results outline the potential of surface treatment for III-V channel metal-oxide-semiconductor devices and application to non-planar device process.

Topics
Potential energy surfaces, Electrical properties and parameters, MOS devices, Plasma processing, Mechanical stress, Atomic layer deposition, X-ray photoelectron spectroscopy, Chemical vapor deposition, Interface properties, Metal-oxide-semiconductor
1.
J. A.
 
del Alamo
,
Nature
 
479
(
7373
),
317
(
2011
).
https://doi.org/10.1038/nature10677
Crossref
Search ADS
PubMed
 
2.
M.
 
Kobayashi
,
P. T.
 
Chen
,
Y.
 
Sun
,
N.
 
Goel
,
P.
 
Majhi
,
M.
 
Garner
,
W.
 
Tsai
,
P.
 
Pianetta
, and
Y.
 
Nishi
,
Appl. Phys. Lett.
 
93
(
18
),
182103
(
2008
).
https://doi.org/10.1063/1.3020298
Crossref
Search ADS
 
3.
H.
 
Hasegawa
,
M.
 
Akazawa
,
A.
 
Domanowska
, and
B.
 
Adamowicz
,
Appl. Surf. Sci.
 
256
(
19
),
5698
(
2010
).
https://doi.org/10.1016/j.apsusc.2010.03.091
Crossref
Search ADS
 
4.
T.
 
Sawada
 and
H.
 
Hasegawa
,
Electron. Lett.
 
12
(
18
),
471
(
1976
).
https://doi.org/10.1049/el:19760358
Crossref
Search ADS
 
5.
P. D.
 
Ye
,
G. D.
 
Wilk
,
B.
 
Yang
,
J.
 
Kwo
,
H.-J. L.
 
Gossmann
,
M.
 
Hong
,
K. K.
 
Ng
, and
J.
 
Bude
,
Appl. Phys. Lett.
 
84
(
3
),
434
(
2004
).
https://doi.org/10.1063/1.1641527
Crossref
Search ADS
 
6.
T. W.
 
Kim
,
R. J. W.
 
Hill
,
C. D.
 
Young
,
D.
 
Veksler
,
L.
 
Morassi
,
S.
 
Oktybrshky
,
J.
 
Oh
,
C. Y.
 
Kang
,
D.
 
Kim
,
J. A.
 
del Alamo
,
C.
 
Hobbs
,
P. D.
 
Kirsch
, and
R.
 
Jammy
, paper presented at the
2012 Symposium on VLSI Technology (VLSIT)
(
2012
).
7.
N.
 
Taoka
,
M.
 
Yokoyama
,
S. H.
 
Kim
,
R.
 
Suzuki
,
S.
 
Lee
,
R.
 
Iida
,
T.
 
Hoshii
,
W.
 
Jevasuwan
,
T.
 
Maeda
,
T.
 
Yasuda
,
O.
 
Ichikawa
,
N.
 
Fukuhara
,
M.
 
Hata
,
M.
 
Takenaka
, and
S.
 
Takagi
,
IEEE Trans. Device Mater. Reliab.
 
13
(
4
),
456
(
2013
).
https://doi.org/10.1109/TDMR.2013.2289330
Crossref
Search ADS
 
8.
R.
 
Engel-Herbert
,
Y.
 
Hwang
, and
S.
 
Stemmer
,
J. Appl. Phys.
 
108
(
12
),
124101
(
2010
).
https://doi.org/10.1063/1.3520431
Crossref
Search ADS
 
9.
W. E.
 
Spicer
,
N.
 
Newman
,
C. J.
 
Spindt
,
Z.
 
Liliental-Weber
, and
E. R.
 
Weber
,
J. Vac. Sci. Technol. A
 
8
(
3
),
2084
(
1990
).
https://doi.org/10.1116/1.577007
Crossref
Search ADS
 
10.
C. L.
 
Hinkle
,
M.
 
Milojevic
,
B.
 
Brennan
,
A. M.
 
Sonnet
,
F. S.
 
Aguirre-Tostado
,
G. J.
 
Hughes
,
E. M.
 
Vogel
, and
R. M.
 
Wallace
,
Appl. Phys. Lett.
 
94
(
16
),
162101
(
2009
).
https://doi.org/10.1063/1.3120546
Crossref
Search ADS
 
11.
N.
 
Taoka
,
M.
 
Yokoyama
,
S. H.
 
Kim
,
R.
 
Suzuki
,
R.
 
Iida
,
S.
 
Lee
,
T.
 
Hoshii
,
W.
 
Jevasuwan
,
T.
 
Maeda
,
T.
 
Yasuda
,
O.
 
Ichikawa
,
N.
 
Fukuhara
,
M.
 
Hata
,
M.
 
Takenaka
, and
S.
 
Takagi
, paper presented at the
2011 IEEE International Electron Devices Meeting (IEDM)
(
2011
).
12.
T.
 
Yoshida
,
Jpn. J. Appl. Phys., Part 1
 
54
(
1
),
010301
(
2015
).
https://doi.org/10.7567/JJAP.54.010301
Crossref
Search ADS
 
13.
S.
 
Oktyabrsky
 and
P.
 
Ye
,
Fundamentals of III-V Semiconductor MOSFETs
(
Springer
,
Dordrecht
,
2010
), p.
139
.
Google Scholar
Crossref
Search ADS
 
14.
V.
 
Chobpattana
,
T. E.
 
Mates
,
W. J.
 
Mitchell
,
J. Y.
 
Zhang
, and
S.
 
Stemmer
,
J. Appl. Phys.
 
114
(
15
),
154108
(
2013
).
https://doi.org/10.1063/1.4825259
Crossref
Search ADS
 
15.
S. J.
 
Pearton
,
F.
 
Ren
,
C. R.
 
Abernathy
,
W. S.
 
Hobson
,
T. R.
 
Fullowan
,
R.
 
Esagui
, and
J. R.
 
Lothian
,
Appl. Phys. Lett.
 
61
(
5
),
586
(
1992
).
https://doi.org/10.1063/1.107845
Crossref
Search ADS
 
16.
H. C.
 
Shin
 and
Hu
 
Chenming
,
Semicond. Sci. Technol.
 
11
(
4
),
463
(
1996
).
https://doi.org/10.1088/0268-1242/11/4/002
Crossref
Search ADS
 
17.
Y.-C.
 
Lin
,
M.-L.
 
Huang
,
C.-Yu.
 
Chen
,
M.-Ku.
 
Chen
,
H.-Ta.
 
Lin
,
P.-Y.
 
Tsai
,
C.-H.
 
Lin
,
H.-C.
 
Chang
,
T.-L.
 
Lee
,
C.-C.
 
Lo
,
S.-M.
 
Jang
,
C. H.
 
Diaz
,
He.-Y.
 
Hwang
,
Y.-C.
 
Sun
, and
E. Yi.
 
Chang
,
Appl. Phys. Express
 
7
(
4
),
041202
(
2014
).
https://doi.org/10.7567/APEX.7.041202
Crossref
Search ADS
 
18.
D.
 
Shahrjerdi
,
E.
 
Tutuc
, and
S. K.
 
Banerjee
,
Appl. Phys. Lett.
 
91
(
6
),
063501
(
2007
).
https://doi.org/10.1063/1.2764438
Crossref
Search ADS
 
19.
D. I.
 
Garcia-Gutierrez
,
D.
 
Shahrjerdi
,
V.
 
Kaushik
, and
S. K.
 
Banerjee
,
J. Vac. Sci. Technol. B
 
27
(
6
),
2390
(
2009
).
https://doi.org/10.1116/1.3256229
Crossref
Search ADS
 
20.
S.
 
Deora
,
G.
 
Bersuker
,
T. W.
 
Kim
,
D. H.
 
Kim
,
C.
 
Hobbs
,
P. D.
 
Kirsch
,
K. C.
 
Sahoo
, and
A. S.
 
Oates
, paper presented at the
2014 IEEE International Reliability Physics Symposium
(
2014
).
21.
S.
 
Deora
,
G.
 
Bersuker
,
W. Y.
 
Loh
,
D.
 
Veksler
,
K.
 
Matthews
,
T. W.
 
Kim
,
R. T. P.
 
Lee
,
R. J. W.
 
Hill
,
D. H.
 
Kim
,
W. E.
 
Wang
,
C.
 
Hobbs
, and
P. D.
 
Kirsch
,
IEEE Trans. Device Mater. Reliab.
 
13
(
4
),
507
(
2013
).
https://doi.org/10.1109/TDMR.2013.2284376
Crossref
Search ADS
 
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