In this paper, we investigated the effect of in-situ Ar ion plasma surface pre-treatment in order to improve the interface properties of In0.53Ga0.47As for high-κ top-gate oxide deposition. X-ray photoelectron spectroscopy (XPS) and metal-oxide-semiconductor capacitors (MOSCAPs) demonstrate that Ar ion treatment removes the native oxide on In0.53Ga0.47As. The XPS spectra of Ar treated In0.53Ga0.47As show a decrease in the AsOx and GaOx signal intensities, and the MOSCAPs show higher accumulation capacitance (Cacc), along with reduced frequency dispersion. In addition, Ar treatment is found to suppress the interface trap density (Dit), which thereby led to a reduction in the threshold voltage (Vth) degradation during constant voltage stress and relaxation. These results outline the potential of surface treatment for III-V channel metal-oxide-semiconductor devices and application to non-planar device process.
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2 November 2015
Research Article|
November 05 2015
Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
Donghyi Koh
;
Donghyi Koh
a)
1Department of Electrical and Computer Engineering, Microelectronics Research Center,
The University of Texas at Austin
, 10100 Burnet Road, Austin, Texas 78758, USA
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Seung Heon Shin
;
Seung Heon Shin
a)
1Department of Electrical and Computer Engineering, Microelectronics Research Center,
The University of Texas at Austin
, 10100 Burnet Road, Austin, Texas 78758, USA
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Jaehyun Ahn;
Jaehyun Ahn
1Department of Electrical and Computer Engineering, Microelectronics Research Center,
The University of Texas at Austin
, 10100 Burnet Road, Austin, Texas 78758, USA
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Sushant Sonde;
Sushant Sonde
1Department of Electrical and Computer Engineering, Microelectronics Research Center,
The University of Texas at Austin
, 10100 Burnet Road, Austin, Texas 78758, USA
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Hyuk-Min Kwon;
Hyuk-Min Kwon
2
SK Hynix
, Icheon, 2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do 136-1, South Korea
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Tommaso Orzali;
Tommaso Orzali
3
SEMATECH Inc.
, 257 Fuller Rd #2200, Albany, New York 12203, USA
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Dae-Hyun Kim;
Dae-Hyun Kim
4
Kyungpook National University
, 80, Daehak-ro, Buk-gu, Daegu 702-701, South Korea
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Tae-Woo Kim;
Tae-Woo Kim
b)
3
SEMATECH Inc.
, 257 Fuller Rd #2200, Albany, New York 12203, USA
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Sanjay K. Banerjee
Sanjay K. Banerjee
1Department of Electrical and Computer Engineering, Microelectronics Research Center,
The University of Texas at Austin
, 10100 Burnet Road, Austin, Texas 78758, USA
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Donghyi Koh
1,a)
Seung Heon Shin
1,a)
Jaehyun Ahn
1
Sushant Sonde
1
Hyuk-Min Kwon
2
Tommaso Orzali
3
Dae-Hyun Kim
4
Tae-Woo Kim
3,b)
Sanjay K. Banerjee
1
1Department of Electrical and Computer Engineering, Microelectronics Research Center,
The University of Texas at Austin
, 10100 Burnet Road, Austin, Texas 78758, USA
2
SK Hynix
, Icheon, 2091, Gyeongchung-daero, Bubal-eub, Icheon-si, Gyeonggi-do 136-1, South Korea
3
SEMATECH Inc.
, 257 Fuller Rd #2200, Albany, New York 12203, USA
4
Kyungpook National University
, 80, Daehak-ro, Buk-gu, Daegu 702-701, South Korea
a)
D. Koh and S. H. Shin contributed equally to this work.
b)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
Appl. Phys. Lett. 107, 183509 (2015)
Article history
Received:
May 20 2015
Accepted:
October 24 2015
Citation
Donghyi Koh, Seung Heon Shin, Jaehyun Ahn, Sushant Sonde, Hyuk-Min Kwon, Tommaso Orzali, Dae-Hyun Kim, Tae-Woo Kim, Sanjay K. Banerjee; Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device. Appl. Phys. Lett. 2 November 2015; 107 (18): 183509. https://doi.org/10.1063/1.4935248
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