van der Waals (vdW) heterojunctions formed by two-dimensional (2D) materials have attracted tremendous attention due to their excellent electrical/optical properties and device applications. However, current 2D heterojunctions are largely limited to atomic crystals, and hybrid organic/inorganic structures are rarely explored. Here, we fabricate the hybrid 2D heterostructures with p-type dioctylbenzothienobenzothiophene (C8-BTBT) and n-type MoS2. We find that few-layer C8-BTBT molecular crystals can be grown on monolayer MoS2 by vdW epitaxy, with pristine interface and controllable thickness down to monolayer. The operation of the C8-BTBT/MoS2 vertical heterojunction devices is highly tunable by bias and gate voltages between three different regimes: interfacial recombination, tunneling, and blocking. The pn junction shows diode-like behavior with rectifying ratio up to 105 at the room temperature. Our devices also exhibit photovoltaic responses with a power conversion efficiency of 0.31% and a photoresponsivity of 22 mA/W. With wide material combinations, such hybrid 2D structures will offer possibilities for opto-electronic devices that are not possible from individual constituents.
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2 November 2015
Research Article|
November 02 2015
A van der Waals pn heterojunction with organic/inorganic semiconductors
Daowei He
;
Daowei He
a)
1National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures,
Nanjing University
, Nanjing 210093, China
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Yiming Pan;
Yiming Pan
a)
2National Laboratory of Solid State Microstructures, School of Physics,
Nanjing University
, Nanjing 210093, China
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Haiyan Nan;
Haiyan Nan
3Department of Physics,
Southeast University
, Nanjing 211189, China
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Shuai Gu;
Shuai Gu
4College of Engineering and Applied Science,
Nanjing University
, Nanjing 210093, China
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Ziyi Yang;
Ziyi Yang
1National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures,
Nanjing University
, Nanjing 210093, China
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Bing Wu
;
Bing Wu
1National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures,
Nanjing University
, Nanjing 210093, China
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Xiaoguang Luo;
Xiaoguang Luo
3Department of Physics,
Southeast University
, Nanjing 211189, China
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Bingchen Xu;
Bingchen Xu
1National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures,
Nanjing University
, Nanjing 210093, China
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Yuhan Zhang;
Yuhan Zhang
1National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures,
Nanjing University
, Nanjing 210093, China
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Yun Li;
Yun Li
1National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures,
Nanjing University
, Nanjing 210093, China
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Zhenhua Ni;
Zhenhua Ni
3Department of Physics,
Southeast University
, Nanjing 211189, China
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Baigeng Wang;
Baigeng Wang
2National Laboratory of Solid State Microstructures, School of Physics,
Nanjing University
, Nanjing 210093, China
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Jia Zhu;
Jia Zhu
4College of Engineering and Applied Science,
Nanjing University
, Nanjing 210093, China
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Yang Chai;
Yang Chai
5Department of Applied Physics,
The Hong Kong Polytechnic University
, Hung Hom, Kowloon, Hong Kong
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Yi Shi;
Yi Shi
b)
1National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures,
Nanjing University
, Nanjing 210093, China
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Xinran Wang
Xinran Wang
b)
1National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures,
Nanjing University
, Nanjing 210093, China
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a)
D. He and Y. Pan contributed equally to this work.
b)
Authors to whom correspondence should be addressed. Electronic addresses: yshi@nju.edu.cn and xrwang@nju.edu.cn.
Appl. Phys. Lett. 107, 183103 (2015)
Article history
Received:
August 04 2015
Accepted:
October 09 2015
Citation
Daowei He, Yiming Pan, Haiyan Nan, Shuai Gu, Ziyi Yang, Bing Wu, Xiaoguang Luo, Bingchen Xu, Yuhan Zhang, Yun Li, Zhenhua Ni, Baigeng Wang, Jia Zhu, Yang Chai, Yi Shi, Xinran Wang; A van der Waals pn heterojunction with organic/inorganic semiconductors. Appl. Phys. Lett. 2 November 2015; 107 (18): 183103. https://doi.org/10.1063/1.4935028
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