By the insertion of thin InxGa1−xN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.
References
1.
C.
Zener
, Proc. R. Soc. A
145
, 523
(1934
).2.
L.
Esaki
, Phys. Rev.
109
, 603
(1958
).3.
S. M.
Sze
and K. K.
Ng
, Physics of Semiconductor Devices
(Wiley
, 2006
).4.
M. J.
Grundmann
and U. K.
Mishra
, Phys. Status Solidi C
4
, 2830
(2007
).5.
J.
Simon
, Z.
Zhang
, K.
Goodman
, H.
Xing
, T.
Kosel
, P.
Fay
, and D.
Jena
, Phys. Rev. Lett.
103
, 026801
(2009
).6.
S.
Krishnamoorthy
, D. N.
Nath
, F.
Akyol
, P. S.
Park
, M.
Esposto
, and S.
Rajan
, Appl. Phys. Lett.
97
, 203502
(2010
).7.
M.
Kaga
, T.
Morita
, Y.
Kuwano
, K.
Yamashita
, K.
Yagi
, M.
Iwaya
, T.
Takeuchi
, S.
Kamiyama
, and I.
Akasaki
, Jpn. J. Appl. Phys., Part 1
52
, 08JH06
(2013
).8.
M. F.
Schubert
, Phys. Rev. B
81
, 035303
(2010
).9.
D.
Jena
, J.
Simon
, A.
Wang
, Y.
Cao
, K.
Goodman
, J.
Verma
, S.
Ganguly
, G.
Li
, K.
Karda
, V.
Protasenko
, C.
Lian
, T.
Kosel
, P.
Fay
, and H.
Xing
, Phys. Status Solidi A
208
, 1511
(2011
).10.
M.-C.
Tsai
, B.
Leung
, T.-C.
Hsu
, and Y.-K.
Kuo
, IEEE J. Lightwave Technol.
31
, 3575
(2013
).11.
W.
Li
, S.
Sharmin
, H.
Ilatikhameneh
, R.
Rahman
, Y.
Lu
, J.
Wang
, X.
Yan
, A.
Seabaugh
, G.
Klimeck
, D.
Jena
, and P.
Fay
, IEEE Explor. Solid-State Comput. Devices Circuits
1
, 28
(2015
).12.
R. D.
King-Smith
and D.
Vanderbilt
, Phys. Rev. B
47
, 1651
(1993
).13.
R.
Resta
, Rev. Mod. Phys.
66
, 899
(1994
).14.
F.
Bernardini
, V.
Fiorentini
, and D.
Vanderbilt
, Phys. Rev. B
56
, R10024
(1997
).15.
D.
Xiao
, M.
Chang
, and Q.
Niu
, Rev. Mod. Phys.
82
, 1959
(2010
).16.
J.
Simon
and D.
Jena
, Phys. Status Solidi A
205
, 1074
(2008
).17.
Sentaurus Device User Guide, Version I−2013.12.
18.
M. S.
Miao
, Q.
Yan
, C. G.
Van de Walle
, W. K.
Lou
, L. L.
Li
, and K.
Chang
, Phys. Rev. Lett.
109
, 186803
(2012
).© 2015 AIP Publishing LLC.
2015
AIP Publishing LLC
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