In recent years, laser doping of selective emitters has offered an attractive method to improve the performance of silicon solar cell. A simple laser process is presented for the local doping of crystalline silicon solar cells. Here, the doped line has been direct-written by a 532 nm wavelength laser combined with lateral ultrasonic spray using phosphoric acid. The laser doping selective emitter was quantitatively and spatially measured using Kelvin probe force microscopy under external light illumination. By using the exploited system, we could pattern the dielectric layer while simultaneously doping the underlying silicon to easily achieve the selective emitter (n++) in one processing step. With argon as the conveyance gas, the local melted Si was surrounded by the air-argon gas mixture in the entire process, which caused a decrease in oxygen incorporation.
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