Phototransistors based on two dimensional semiconductors have drawn increasing attention in recent years. GaSe is a typical semiconductor with a layered structure. In this work, the ultrathin GaSe nanosheets were exfoliated from commercially available crystals using a micromechanical cleavage technique. Then, the nanosheets were used to fabricate field effect transistors (FETs) on Si/SiO2 substrates with interdigitated electrodes. The electrical and optoelectronic properties of the FET were characterized. The phototransistor based on a GaSe nanosheet had a high photoresponsivity (∼2200 mA/W) and a high Iphoto/Idark (photoresponse current over dark current) ratio of almost 103.
Highly sensitive phototransistor based on GaSe nanosheets
Hai Huang, Peng Wang, Yanqing Gao, Xudong Wang, Tie Lin, Jianlu Wang, Lei Liao, Jinglan Sun, Xiangjian Meng, Zhiming Huang, Xiaoshuang Chen, Junhao Chu; Highly sensitive phototransistor based on GaSe nanosheets. Appl. Phys. Lett. 5 October 2015; 107 (14): 143112. https://doi.org/10.1063/1.4933034
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