The piezoelectric response of AlGaN/GaN circular HEMT pressure sensing device integrated on AlGaN/GaN diaphragm was experimentally investigated and supported by the finite element method modeling. The 4.2 μm thick diaphragm with 1500 μm diameter was loaded by the dynamic peak-to-peak pressure up to 36 kPa at various frequencies. The piezoelectric charge induced on two Schottky gate electrodes of different areas was measured. The frequency independent maximal sensitivity 4.4 pC/kPa of the piezoelectric pressure sensor proposed in a concept of micro-electro-mechanical system was obtained on the gate electrode with larger area. The measurement revealed a linear high performance piezoelectric response in the examined dynamic pressure range.
AlGaN/GaN diaphragm-based pressure sensor with direct high performance piezoelectric transduction mechanism
J. Dzuba, G. Vanko, M. Držík, I. Rýger, V. Kutiš, J. Zehetner, T. Lalinský; AlGaN/GaN diaphragm-based pressure sensor with direct high performance piezoelectric transduction mechanism. Appl. Phys. Lett. 21 September 2015; 107 (12): 122102. https://doi.org/10.1063/1.4931436
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