We report on an X-ray photoelectron spectroscopy (XPS) study of two graphene based devices that were analyzed by imposing a significant current under +3 V bias. The devices were fabricated as graphene layers(s) on hexagonal SiC substrates, either on the C- or Si-terminated faces. Position dependent potential distributions (IR-drop), as measured by variations in the binding energy of a C1s peak are observed to be sporadic for the C-face graphene sample, but very smooth for the Si-face one, although the latter is less conductive. We attribute these sporadic variations in the C-face device to the incomplete electrical decoupling between the graphene layer(s) with the underlying buffer and/or substrate layers. Variations in the Si2p and O1s peaks of the underlayer(s) shed further light into the electrical interaction between graphene and other layers. Since the potential variations are amplified only under applied bias (voltage-contrast), our methodology gives unique, chemically specific electrical information that is difficult to obtain by other techniques.
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21 September 2015
Research Article|
September 23 2015
Voltage contrast X-ray photoelectron spectroscopy reveals graphene-substrate interaction in graphene devices fabricated on the C- and Si- faces of SiC
Pinar Aydogan;
Pinar Aydogan
1Department of Chemistry,
Bilkent University
, 06800 Ankara, Turkey
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Engin Arslan;
Engin Arslan
2Department of Physics,
Bilkent University
, 06800 Ankara, Turkey
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Semih Cakmakyapan;
Semih Cakmakyapan
2Department of Physics,
Bilkent University
, 06800 Ankara, Turkey
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Ekmel Ozbay;
Ekmel Ozbay
2Department of Physics,
Bilkent University
, 06800 Ankara, Turkey
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Wlodek Strupinski;
Wlodek Strupinski
3
Institute of Electronic Materials Technology
, Wolczynska 133, 01-919 Warsaw, Poland
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Sefik Suzer
Sefik Suzer
a)
1Department of Chemistry,
Bilkent University
, 06800 Ankara, Turkey
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
Appl. Phys. Lett. 107, 121603 (2015)
Article history
Received:
April 01 2015
Accepted:
September 14 2015
Citation
Pinar Aydogan, Engin Arslan, Semih Cakmakyapan, Ekmel Ozbay, Wlodek Strupinski, Sefik Suzer; Voltage contrast X-ray photoelectron spectroscopy reveals graphene-substrate interaction in graphene devices fabricated on the C- and Si- faces of SiC. Appl. Phys. Lett. 21 September 2015; 107 (12): 121603. https://doi.org/10.1063/1.4931725
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