We find that monolayer epitaxial graphene devices exposed to aggressive aqueous-ozone processing and annealing became cleaner from post-fabrication organic resist residuals and, significantly, maintain their high carrier mobility. Additionally, we observe a decrease in carrier density from inherent strong n-type doping to extremely low p-type doping after processing. This transition is explained to be a consequence of the cleaning effect of aqueous-ozone processing and annealing, since the observed removal of resist residuals from SiC/G enables the exposure of the bare graphene to dopants present in ambient conditions. The resulting combination of charge neutrality, high mobility, large area clean surfaces, and susceptibility to environmental species suggest this processed graphene system as an ideal candidate for gas sensing applications.

1.
F.
Schedin
,
A. K.
Geim
,
S. V.
Morozov
,
E. W.
Hill
,
P.
Blake
,
M. I.
Katsnelson
, and
K. S.
Novoselov
,
Nat. Mater.
6
,
652
(
2007
).
2.
R.
Pearce
,
T.
Iakimov
,
M.
Andersson
,
L.
Hultman
,
A. L.
Spetz
, and
R.
Yakimova
,
Sens. Actuators, B
155
,
451
(
2011
).
3.
Y.
Dan
,
Y.
Lu
,
N. J.
Kybert
,
Z.
Luo
, and
A. T. C.
Johnson
,
Nano Lett.
9
,
1472
(
2009
).
4.
S.
Basu
and
P.
Bhattacharyya
,
Sens. Actuators, B
173
,
1
(
2012
).
5.
D. A.
Bolon
and
C. O.
Kunz
,
Polym. Eng. Sci.
12
,
109
(
1972
).
6.
J. R.
Vig
,
J. Vac. Sci. Technol., A
3
,
1027
(
1985
).
7.
W.
Kern
,
Handbook of Semiconductor Wafer Cleaning Technology
(
Noyes Publications
,
1993
), pp.
111
196
.
8.
N.
Leconte
,
J.
Moser
,
P.
Ordejon
,
H.
Tao
,
A.
Lherbier
,
A.
Bachtold
,
F.
Alsina
,
C. S.
Torres
,
J.-C.
Charlier
, and
S.
Roche
,
ACS Nano
4
,
4033
(
2010
).
9.
J.
Moser
,
H.
Tao
,
S.
Roche
,
F.
Alzina
,
C. M.
Sotomayor-Torres
, and
A.
Bachtold
,
Phys. Rev. B
81
,
205445
(
2010
).
10.
H.
Tao
,
J.
Moser
,
F.
Alzina
,
Q.
Wang
, and
C. M.
Sotomayor-Torres
,
J. Phys. Chem. C
115
,
18257
(
2011
).
11.
E. X.
Zhang
,
A. K. M.
Newaz
,
B.
Wang
,
C. X.
Zhang
,
D. M.
Fleetwood
,
K. I.
Bolotin
,
R. D.
Schrimpf
,
S. T.
Pantelides
, and
M. L.
Alles
,
Appl. Phys. Lett.
101
,
121601
(
2012
).
12.
S.
Jandhyala
,
G.
Mordi
,
B.
Lee
,
G.
Lee
,
C.
Floresca
,
P.-R.
Cha
,
J.
Ahn
,
R.
Wallace
,
Y.
Chabal
, and
M.
Kim
,
ACS Nano
6
,
2722
(
2012
).
13.
F.
Alzina
,
H.
Tao
,
J.
Moser
,
Y.
Garcia
,
A.
Bachtold
, and
C. M.
Sotomayor-Torres
,
Phys. Rev. B
82
,
75422
(
2010
).
14.
J.
Moser
,
A.
Barreiro
, and
A.
Bachtold
,
Appl. Phys. Lett.
91
,
163513
(
2007
).
15.
N.
Lindvall
,
A.
Kalabukhov
, and
A.
Yurgens
,
J. Appl. Phys.
111
,
064904
(
2012
).
16.
A.
Nath
,
A. D.
Koehler
,
G. G.
Jernigan
,
V. D.
Wheeler
,
J. K.
Hite
,
S. C.
Hernández
,
Z. R.
Robinson
,
N. Y.
Garces
,
R. L.
Myers-Ward
,
C. R.
Eddy
,
D. K.
Gaskill
, and
M. V
Rao
,
Appl. Phys. Lett.
104
,
224102
(
2014
).
17.
M. J.
Webb
,
C.
Polley
,
K.
Dirscherl
,
G.
Burwell
,
P.
Palmgren
,
Y.
Niu
,
A.
Lundstedt
,
A. A.
Zakharov
,
O. J.
Guy
,
T.
Balasubramanian
,
R.
Yakimova
, and
H.
Grennberg
,
Appl. Phys. Lett.
105
,
081602
(
2014
).
18.
C.
Coletti
,
C.
Riedl
,
D. S.
Lee
,
B.
Krauss
,
L.
Patthey
,
K.
von Klitzing
,
J. H.
Smet
, and
U.
Starke
,
Phys. Rev. B
81
,
235401
(
2010
).
19.
S.
Kopylov
,
A.
Tzalenchuk
,
S.
Kubatkin
, and
V. I.
Fal'ko
,
Appl. Phys. Lett.
97
,
112109
(
2010
).
20.
R.
Yakimova
,
T.
Iakimov
, and
M.
Syväjärvi
, “
Process for growth of graphene
,” U.S. patent PCT/SE2011/050328 (22 March 2012).
21.
A.
Tzalenchuk
,
S.
Lara-Avila
,
A.
Kalaboukhov
,
S.
Paolillo
,
M.
Syväjärvi
,
R.
Yakimova
,
O.
Kazakova
,
T. J. B. M.
Janssen
,
V.
Fal'ko
, and
S.
Kubatkin
,
Nat. Nanotechnol.
5
,
186
(
2010
).
22.
S.
Lara-Avila
,
K.
Moth-Poulsen
,
R.
Yakimova
,
T.
Bjørnholm
,
V.
Fal'ko
,
A.
Tzalenchuk
, and
S.
Kubatkin
,
Adv. Mater.
23
,
878
(
2011
).
23.
T.
Yager
,
A.
Lartsev
,
S.
Mahashabde
,
S.
Charpentier
,
D.
Davidovikj
,
A. V
Danilov
,
R.
Yakimova
,
V.
Panchal
,
O.
Kazakova
,
A.
Tzalenchuk
,
S.
Lara-Avila
, and
S.
Kubatkin
,
Nano Lett.
13
,
4217
(
2013
).
24.
T.
Yager
,
A.
Lartsev
,
R.
Yakimova
,
S.
Lara-Avila
, and
S.
Kubatkin
, “
Wafer-Scale Homogeneity of Transport Properties in Epitaxial Graphene on SiC
,”
Carbon
(in press); preprint arXiv:1502.02013.
25.
K. S.
Novoselov
,
A. K.
Geim
,
S. V.
Morozov
,
D.
Jiang
,
M. I.
Katsnelson
,
I. V.
Grigorieva
,
S. V.
Dubonos
, and
A. A.
Firsov
,
Nature
438
,
197
(
2005
).
26.
C.
Riedl
,
C.
Coletti
,
T.
Iwasaki
,
A. A.
Zakharov
, and
U.
Starke
,
Phys. Rev. Lett.
103
,
246804
(
2009
).
27.
K.
Lee
,
S.
Kim
,
M. S.
Points
,
T. E.
Beechem
,
T.
Ohta
, and
E.
Tutuc
,
Nano Lett.
11
,
3624
(
2011
).
28.
H.
Pinto
and
A.
Markevich
,
Beilstein J. Nanotechnol.
5
,
1842
(
2014
).
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