This study reports the magnetotransport and magnetic properties of 20 nm-thick polycrystalline Ni films deposited by magnetron sputtering on unpoled piezoelectric (011) [PbMg1/3Nb2/3O3]0.68-[PbTiO3]0.32 (PMN-PT) substrates. The longitudinal magnetoresistance (MR) of the Ni films on (011) PMN-PT, measured at room temperature in the magnetic field range of −0.3 T < μ0H < 0.3 T, is found to depend on the crystallographic direction and polarization state of piezosubstrate. Upon poling the PMN-PT substrate, which results in a transfer of strain to the Ni film, the MR value decreases by factor of 20 for the current along [100] of PMN-PT and slightly increases for the [] current direction. Simultaneously, a strong increase (decrease) in the field value, where the MR saturates, is observed for the [] ([100]) current direction. The anisotropic magnetoresistance is also strongly affected by the remanent strain induced by the electric field pulses applied to the PMN-PT in the non-linear regime revealing a large (132 mT) magnetic anisotropy field. Applying a critical electric field of 2.4 kV/cm, the anisotropy field value changes back to the original value, opening a path to voltage-tuned magnetic field sensor or storage devices. This strain mediated voltage control of the MR and its dependence on the crystallographic direction is correlated with the results of magnetization reversal measurements.
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9 February 2015
Research Article|
February 10 2015
Electric field modification of magnetotransport in Ni thin films on (011) PMN-PT piezosubstrates
Alexander Tkach;
Alexander Tkach
1Institute of Physics,
Johannes Gutenberg University
, Staudinger Weg 7, 55128 Mainz, Germany
2CICECO – Aveiro Institute of Materials, Department of Materials and Ceramic Engineering,
University of Aveiro
, 3810-093 Aveiro, Portugal
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Andreas Kehlberger;
Andreas Kehlberger
1Institute of Physics,
Johannes Gutenberg University
, Staudinger Weg 7, 55128 Mainz, Germany
3
Graduate School of Excellence Materials Science in Mainz
, Staudinger Weg 9, 55128 Mainz, Germany
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Felix Büttner;
Felix Büttner
1Institute of Physics,
Johannes Gutenberg University
, Staudinger Weg 7, 55128 Mainz, Germany
3
Graduate School of Excellence Materials Science in Mainz
, Staudinger Weg 9, 55128 Mainz, Germany
4Institute of Optics and Atomic Physics,
Technical University of Berlin
, Str. des 17 Juni 135, 10623 Berlin, Germany
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Gerhard Jakob;
Gerhard Jakob
1Institute of Physics,
Johannes Gutenberg University
, Staudinger Weg 7, 55128 Mainz, Germany
3
Graduate School of Excellence Materials Science in Mainz
, Staudinger Weg 9, 55128 Mainz, Germany
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Stefan Eisebitt;
Stefan Eisebitt
4Institute of Optics and Atomic Physics,
Technical University of Berlin
, Str. des 17 Juni 135, 10623 Berlin, Germany
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Mathias Kläui
Mathias Kläui
1Institute of Physics,
Johannes Gutenberg University
, Staudinger Weg 7, 55128 Mainz, Germany
3
Graduate School of Excellence Materials Science in Mainz
, Staudinger Weg 9, 55128 Mainz, Germany
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Appl. Phys. Lett. 106, 062404 (2015)
Article history
Received:
December 22 2014
Accepted:
January 28 2015
Citation
Alexander Tkach, Andreas Kehlberger, Felix Büttner, Gerhard Jakob, Stefan Eisebitt, Mathias Kläui; Electric field modification of magnetotransport in Ni thin films on (011) PMN-PT piezosubstrates. Appl. Phys. Lett. 9 February 2015; 106 (6): 062404. https://doi.org/10.1063/1.4907775
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