We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecture offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.
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2 February 2015
Research Article|
February 05 2015
High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes
Y. Wu;
Y. Wu
1State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering,
Zhejiang University
, Hangzhou 310027, China
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T. Hasan;
T. Hasan
2Cambridge Graphene Centre,
University of Cambridge
, Cambridge CB3 0FA, United Kingdom
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X. Li;
X. Li
1State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering,
Zhejiang University
, Hangzhou 310027, China
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P. Xu;
P. Xu
1State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering,
Zhejiang University
, Hangzhou 310027, China
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Y. Wang;
Y. Wang
1State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering,
Zhejiang University
, Hangzhou 310027, China
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X. Shen;
X. Shen
1State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering,
Zhejiang University
, Hangzhou 310027, China
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X. Liu;
X. Liu
1State Key Laboratory of Modern Optical Instrumentation, Department of Optical Engineering,
Zhejiang University
, Hangzhou 310027, China
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a)
Author to whom correspondence should be addressed. Electronic mail: qingyang@zju.edu.cn
Appl. Phys. Lett. 106, 051108 (2015)
Article history
Received:
November 04 2014
Accepted:
January 23 2015
Citation
Y. Wu, T. Hasan, X. Li, P. Xu, Y. Wang, X. Shen, X. Liu, Q. Yang; High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes. Appl. Phys. Lett. 2 February 2015; 106 (5): 051108. https://doi.org/10.1063/1.4907568
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