Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlOx) interlayers. A step-by-step in situ procedure by deposition of AlOx and hafnium oxide (HfOx) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO2/AlOx/GeOx/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlOx interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 1011 cm−2eV−1 with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.
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8 June 2015
Research Article|
June 09 2015
Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers
Ryohei Asahara;
Ryohei Asahara
1Graduate School of Engineering,
Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Iori Hideshima;
Iori Hideshima
1Graduate School of Engineering,
Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Hiroshi Oka;
Hiroshi Oka
1Graduate School of Engineering,
Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Yuya Minoura;
Yuya Minoura
1Graduate School of Engineering,
Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Shingo Ogawa;
Shingo Ogawa
1Graduate School of Engineering,
Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
2
Toray Research Center Inc.
, 3-3-7 Sonoyama, Otsu, Shiga 520-8567, Japan
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Akitaka Yoshigoe;
Akitaka Yoshigoe
3
Japan Atomic Energy Agency
, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
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Yuden Teraoka;
Yuden Teraoka
3
Japan Atomic Energy Agency
, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan
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Takuji Hosoi;
Takuji Hosoi
a)
1Graduate School of Engineering,
Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Takayoshi Shimura;
Takayoshi Shimura
1Graduate School of Engineering,
Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Heiji Watanabe
Heiji Watanabe
1Graduate School of Engineering,
Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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a)
E-mail: [email protected]
Appl. Phys. Lett. 106, 233503 (2015)
Article history
Received:
April 06 2015
Accepted:
June 01 2015
Citation
Ryohei Asahara, Iori Hideshima, Hiroshi Oka, Yuya Minoura, Shingo Ogawa, Akitaka Yoshigoe, Yuden Teraoka, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe; Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers. Appl. Phys. Lett. 8 June 2015; 106 (23): 233503. https://doi.org/10.1063/1.4922447
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