Device architectures that incorporate graphene to realize detection of electromagnetic radiation typically utilize the direct absorbance of radiation by graphene. This limits their effective area to the size of the graphene and their applicability to lower-energy, less penetrating forms of radiation. In contrast, graphene-based transistor architectures that utilize the field effect as the detection mechanism can be sensitive to interactions of radiation not only with graphene but also with the surrounding substrate. Here, we report the study of the position sensitivity and response of a graphene-based field effect transistor (GFET) to penetrating, well-collimated radiation (micro-beam X-rays), producing ionization in the substrate primarily away from graphene. It is found that responsivity and response speed are strongly dependent on the X-ray beam distance from graphene and the gate voltage applied to the GFET. To develop an understanding of the spatially dependent response, a model is developed that incorporates the volumetric charge generation, transport, and recombination. The model is in good agreement with the observed spatial response characteristics of the GFET and predicts a greater response potential of the GFET to radiation interacting near its surface. The study undertaken provides the necessary insight into the volumetric nature of the GFET response, essential for development of GFET-based detectors for more penetrating forms of ionizing radiation.
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1 June 2015
Research Article|
June 03 2015
Position sensitivity of graphene field effect transistors to X-rays
Edward Cazalas;
Edward Cazalas
1Department of Mechanical and Nuclear Engineering,
The Pennsylvania State University
, University Park, Pennsylvania 16802, USA
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Biddut K. Sarker;
Biddut K. Sarker
b)
2Department of Physics and Astronomy,
Purdue University
, West Lafayette, Indiana 47907, USA
3Birck Nanotechnology Center,
Purdue University
, West Lafayette, Indiana 47907, USA
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Michael E. Moore;
Michael E. Moore
1Department of Mechanical and Nuclear Engineering,
The Pennsylvania State University
, University Park, Pennsylvania 16802, USA
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Isaac Childres;
Isaac Childres
2Department of Physics and Astronomy,
Purdue University
, West Lafayette, Indiana 47907, USA
3Birck Nanotechnology Center,
Purdue University
, West Lafayette, Indiana 47907, USA
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Yong P. Chen;
Yong P. Chen
2Department of Physics and Astronomy,
Purdue University
, West Lafayette, Indiana 47907, USA
3Birck Nanotechnology Center,
Purdue University
, West Lafayette, Indiana 47907, USA
4School of Electrical and Computer Engineering,
Purdue University
, West Lafayette, Indiana 47907, USA
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Igor Jovanovic
Igor Jovanovic
1Department of Mechanical and Nuclear Engineering,
The Pennsylvania State University
, University Park, Pennsylvania 16802, USA
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
b)
E. Cazalas and B. K. Sarker contributed equally to this work.
Appl. Phys. Lett. 106, 223503 (2015)
Article history
Received:
January 09 2015
Accepted:
May 15 2015
Citation
Edward Cazalas, Biddut K. Sarker, Michael E. Moore, Isaac Childres, Yong P. Chen, Igor Jovanovic; Position sensitivity of graphene field effect transistors to X-rays. Appl. Phys. Lett. 1 June 2015; 106 (22): 223503. https://doi.org/10.1063/1.4921755
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