Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as a dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence of crystalline h-BN over the entire substrate is confirmed by Raman spectroscopy. Atomic force microscopy is used to examine the morphology and continuity of the synthesized films. A scanning electron microscopy study of films obtained using shorter depositions offers insight into the nucleation and growth behavior of h-BN on the Ni substrate. The morphology of h-BN was found to evolve from dendritic, star-shaped islands to larger, smooth triangular ones with increasing growth temperature.
Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy
S. Nakhaie, J. M. Wofford, T. Schumann, U. Jahn, M. Ramsteiner, M. Hanke, J. M. J. Lopes, H. Riechert; Synthesis of atomically thin hexagonal boron nitride films on nickel foils by molecular beam epitaxy. Appl. Phys. Lett. 25 May 2015; 106 (21): 213108. https://doi.org/10.1063/1.4921921
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