We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time, and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film field-effect transistors were fabricated on Si/SiO2 substrates and intentionally aged for a month to verify reliability and achieve better current stability. The same devices with the channel covered by 10 nm of Al2O3 were used as reference samples. The exposure to ethanol, acetonitrile, toluene, chloroform, and methanol vapors results in drastic changes in the source-drain current. The current can increase or decrease by more than two-orders of magnitude depending on the polarity of the analyte. The reference devices with coated channel did not show any response. It was established that transient time of the current change and the normalized spectral density of the low-frequency current fluctuations can be used as additional sensing parameters for selective gas detection with thin-film MoS2 transistors.
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12 January 2015
Research Article|
January 13 2015
Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices
R. Samnakay
;
R. Samnakay
1Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program,
University of California–Riverside
, Riverside, California 92521, USA
2Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering,
University of California–Riverside
, Riverside, California 92521, USA
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C. Jiang;
C. Jiang
2Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering,
University of California–Riverside
, Riverside, California 92521, USA
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S. L. Rumyantsev;
S. L. Rumyantsev
3Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics,
Rensselaer Polytechnic Institute
, Troy, New York 12180, USA
4
Ioffe Physical-Technical Institute
, St. Petersburg 194021, Russia
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M. S. Shur
;
M. S. Shur
3Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics,
Rensselaer Polytechnic Institute
, Troy, New York 12180, USA
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A. A. Balandin
A. A. Balandin
a)
1Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program,
University of California–Riverside
, Riverside, California 92521, USA
2Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering,
University of California–Riverside
, Riverside, California 92521, USA
Search for other works by this author on:
R. Samnakay
1,2
C. Jiang
2
S. L. Rumyantsev
3,4
M. S. Shur
3
A. A. Balandin
1,2,a)
1Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program,
University of California–Riverside
, Riverside, California 92521, USA
2Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering,
University of California–Riverside
, Riverside, California 92521, USA
3Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics,
Rensselaer Polytechnic Institute
, Troy, New York 12180, USA
4
Ioffe Physical-Technical Institute
, St. Petersburg 194021, Russia
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
Appl. Phys. Lett. 106, 023115 (2015)
Article history
Received:
November 19 2014
Accepted:
December 28 2014
Citation
R. Samnakay, C. Jiang, S. L. Rumyantsev, M. S. Shur, A. A. Balandin; Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices. Appl. Phys. Lett. 12 January 2015; 106 (2): 023115. https://doi.org/10.1063/1.4905694
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