The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/ making our graphene sensors highly interesting for industrial applications.
Magnetic Field Sensors Market by Type, Technology, Applications, and Geography—Forecasts & Analysis to 2013–2020, Markets and Markets Report, September 2014.
The measuring setup has a constantan wiring with a non-negligible resistance of about Rw = 300 Ω. The bias voltage Vb denotes the applied voltage at the voltage source. The voltage drop across the Hall sensor element VSD is given by .
Raman map of device S2 shows a with normal distribution with a mean value of around 17 cm−1.