We show that ballistic one-dimensional channels can be formed in an ambipolar device fabricated on a high mobility heterostructure. Both electron and hole quantised conductances can be measured in the same one-dimensional channel. We have used this device to compare directly the subband spacings of the two charge carriers in the same confining potential and used this to compare the electron and hole effective masses.
Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts
J. C. H. Chen, O. Klochan, A. P. Micolich, K. Das Gupta, F. Sfigakis, D. A. Ritchie, K. Trunov, D. Reuter, A. D. Wieck, A. R. Hamilton; Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts. Appl. Phys. Lett. 4 May 2015; 106 (18): 183504. https://doi.org/10.1063/1.4918934
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